© 2011

Strain-Induced Effects in Advanced MOSFETs


  • comprehensive overview of strain techniques

  • accurate description of strain induced modifications of the valence and conduction bands

  • overview of transport modeling in strain devices


Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Viktor Sverdlov
    Pages 1-3
  3. Viktor Sverdlov
    Pages 23-34
  4. Viktor Sverdlov
    Pages 35-44
  5. Viktor Sverdlov
    Pages 45-62
  6. Viktor Sverdlov
    Pages 91-103
  7. Viktor Sverdlov
    Pages 105-121
  8. Viktor Sverdlov
    Pages 131-167
  9. Back Matter
    Pages 239-252

About this book


Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given


semiconductor devices strain technique transport modeling

Authors and affiliations

  1. 1., Institute for MicroelectronicsTechnical University ViennaViennaAustria

Bibliographic information

  • Book Title Strain-Induced Effects in Advanced MOSFETs
  • Authors Viktor Sverdlov
  • Series Title Computational Microelectronics
  • Series Abbreviated Title Computational Microelectronics
  • DOI
  • Copyright Information Springer-Verlag/Wien 2011
  • Publisher Name Springer, Vienna
  • eBook Packages Engineering Engineering (R0)
  • Hardcover ISBN 978-3-7091-0381-4
  • Softcover ISBN 978-3-7091-1933-4
  • eBook ISBN 978-3-7091-0382-1
  • Series ISSN 0179-0307
  • Edition Number 1
  • Number of Pages XIV, 252
  • Number of Illustrations 0 b/w illustrations, 0 illustrations in colour
  • Topics Electronics and Microelectronics, Instrumentation
  • Buy this book on publisher's site
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