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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

  • Zhiqiang Li

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Zhiqiang Li
    Pages 1-9
  3. Zhiqiang Li
    Pages 27-40
  4. Zhiqiang Li
    Pages 41-55
  5. Zhiqiang Li
    Pages 57-59

About this book

Introduction

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Keywords

Contact resistance Thermal stability Germanium-based MOSFET Dopant segregation Source and drain Nickel germanide Dopant activation MOS device

Authors and affiliations

  • Zhiqiang Li
    • 1
  1. 1.Peking UniversityInstitute of MicroelectronicsBeijingChina

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-662-49683-1
  • Copyright Information Springer-Verlag Berlin Heidelberg 2016
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-662-49681-7
  • Online ISBN 978-3-662-49683-1
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
  • Buy this book on publisher's site
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