About this book
Introduction
This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.
Keywords
Giant magnetoresistance (GMR) Magnetic random access memory (MRAM) Magnetic sensor and head Metal multilayers Tunnel-type magnetoresistance (TMR) basic research electric current electron electronics magnetic field optics
Authors and affiliations
- Eiichi Hirota
- Hirosi Sakakima
- Koichiro Inomata
- 1.Advanced Technology Reserach LaboratoriesMatushita Electric Industrial Co., Ltd.Seika, Souraku, KyotoJapan
- 2.Department of Materials ScienceTohoku UniversityAramaki, Aoba-ku, SendaiJapan
Bibliographic information