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Metal Impurities in Silicon-Device Fabrication

  • Klaus Graff

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 24)

Table of contents

  1. Front Matter
    Pages I-IX
  2. Klaus Graff
    Pages 1-4
  3. Klaus Graff
    Pages 65-110
  4. Klaus Graff
    Pages 111-131
  5. Klaus Graff
    Pages 132-153
  6. Klaus Graff
    Pages 154-163
  7. Klaus Graff
    Pages 164-192
  8. Klaus Graff
    Pages 193-196
  9. Back Matter
    Pages 197-218

About this book

Introduction

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.

Keywords

Scandium Tantal chromium cobalt copper gold mercury metals nickel platinum silicon spectroscopy surface transition metal zinc

Authors and affiliations

  • Klaus Graff
    • 1
    • 2
  1. 1.Telefunken ElectronicHeilbronnGermany
  2. 2.HeilbronnGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-97593-6
  • Copyright Information Springer-Verlag Berlin Heidelberg 1995
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-97595-0
  • Online ISBN 978-3-642-97593-6
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • Buy this book on publisher's site
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