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Amorphous and Crystalline Silicon Carbide IV

Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991

  • Conference proceedings
  • © 1992

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Editors:
  1. Cary Y. Yang

    1. Microelectronics Laboratory, Santa Clara University, Santa Clara, USA

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  2. M. Mahmudur Rahman

    1. Microelectronics Laboratory, Santa Clara University, Santa Clara, USA

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  3. Gary L. Harris

    1. School of Engineering, Howard University, USA

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Part of the book series: Springer Proceedings in Physics (SPPHY, volume 71)

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Table of contents (63 papers)

  1. Characterization of Crystalline Silicon Carbide

    1. Nitrogen Impurities in 3C-SiC Epilayers

      • I. Nashiyama, S. Misawa, H. Okumura, S. Yoshida, Y. Hirabayashi
      Pages 136-141

    2. Electron Nuclear Double Resonance Investigations of Nitrogen Donors in 6H and 4H-SiC

      • S. Greulich-Weber, R. Müller, J.-M. Spaeth
      Pages 142-142

    3. Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers

      • W. Suttrop, H. Zhang, M. Schadt, G. Pensl, K. Dohnke, S. Leibenzeder
      Pages 143-148

    4. EPR in the 2-mm Range and Optical Absorption of the Native Defect in 4H-SiC Epilayers

      • E. N. Kalabukhova, S. N. Lukin, B. D. Shanina, Yu. A. Vodakov, A. A. Lepneva, E. N. Mokhov
      Pages 149-161

    5. The Structure of the D-Center in Silicon Carbide — A Study with Electron Nuclear Double Resonance

      • S. Greulich-Weber, R. Müller, J.-M. Spaeth
      Pages 162-162

    6. Oxidation Studies for 6H-SiC

      • C. S. Patuwathavithane, J. B. Crofton, J. R. Williams, C. C. Tin, Z. C. Feng, M. J. Bozack et al.
      Pages 163-169

    7. Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model

      • P. Srichaikul, A.-B. Chen, W. J. Choyke
      Pages 170-175

    8. Metallization Studies on Epitaxial 6H-SiC

      • J. Crofton, J. M. Ferrero, P. A. Barnes, J. R. Williams, M. J. Bozack, C. C. Tin et al.
      Pages 176-182

    9. TEM Study of β-SiC Films Grown on (111) Silicon Substrates

      • K. Fekade, M. G. Spencer, S. Nahm, L. G. Salamanca-Riba
      Pages 183-189

    10. Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies

      • J. B. Petit, P. G. Neudeck, L. G. Matus, J. A. Powell
      Pages 190-196

    11. Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM

      • P. J. Schields
      Pages 197-197

    12. Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD

      • R. N. Kyutt, I. P. Nikitina, S. S. Ruvimov, D. Baither
      Pages 198-205

    13. Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide

      • X. Tang, K. G. Irvine, D. Zhang, M. G. Spencer
      Pages 206-209

    14. Optically Induced Near-IR Absorption Lines in 6H-SiC

      • Th. Stiasny, R. Helbig, R. A. Stein
      Pages 210-215

    15. Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates

      • M. F. MacMillan, W. J. Choyke, R. P. Devaty
      Pages 216-220

    16. Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra

      • Ch. Haberstroh, R. Helbig, S. Leibenzeder
      Pages 221-226

  2. Growth and Characterization of Polycrystalline, Microcrystalline, and Amorphous Silicon Carbide

    1. Front Matter

      Pages 227-227
      Download chapter PDF

    2. Novel Feedstocks for a-SiC:H Films

      • Y.-M. Li, B. F. Fieselmann, A. Catalano
      Pages 229-238

    3. Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide

      • D. J. Larkin, L. V. Interrante
      Pages 239-244

    4. Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD

      • A. Tabata, K. Tomiita, Y. Suzuoki, T. Mizutani
      Pages 245-251
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Keywords

About this book

Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.

Editors and Affiliations

  • Microelectronics Laboratory, Santa Clara University, Santa Clara, USA

    Cary Y. Yang, M. Mahmudur Rahman

  • School of Engineering, Howard University, USA

    Gary L. Harris

Bibliographic Information

  • Book Title: Amorphous and Crystalline Silicon Carbide IV

  • Book Subtitle: Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991

  • Editors: Cary Y. Yang, M. Mahmudur Rahman, Gary L. Harris

  • Series Title: Springer Proceedings in Physics

  • DOI: https://doi.org/10.1007/978-3-642-84804-9

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1992

  • Softcover ISBN: 978-3-642-84806-3Published: 09 February 2012

  • eBook ISBN: 978-3-642-84804-9Published: 06 December 2012

  • Series ISSN: 0930-8989

  • Series E-ISSN: 1867-4941

  • Edition Number: 1

  • Number of Pages: XII, 432

  • Topics: Crystallography and Scattering Methods, Electronics and Microelectronics, Instrumentation

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