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High-Speed Electronics

Basic Physical Phenomena and Device Principles Proceedings of the International Conference, Stockholm, Sweden, August 7–9, 1986

  • Conference proceedings
  • © 1986

Overview

Editors:
  1. Bengt Källbäck

    1. RIFA AB, Stockholm, Sweden

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  2. Heinz Beneking

    1. Institut für Halbleitertechnik, Rhein.-Westf. Technische Hochschule, Aachen, Fed. Rep. of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 22)

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Table of contents (45 papers)

  1. Heterostructures, Superlattices and Quantum Wells

    1. High-Velocity Vertical Transport in Graded Gap GaAs/GaAlAs Superlattices

      • B. Lambert, B. Deveaud, A. Chomette, A. Regreny, R. Romestain
      Pages 104-107

    2. Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing

      • B. Cabon-Till, G. Ghibaudo
      Pages 108-111

    3. Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AlGaAs/GaAs/AlGaAs Heterostructure

      • C. Hamaguchi, K. Miyatsuji, H. Tanimoto
      Pages 112-115

    4. Monte Carlo Study of Hot Electron Transport in GaAs-AlGaAs Quantum Wells

      • S. M. Goodnick, P. Lugli
      Pages 116-119

  2. High-Speed Electronic Devices

    1. Front Matter

      Pages 120-120
      Download chapter PDF

    2. High-Speed Bulk Unipolar Structures in Silicon

      • J. M. Shannon
      Pages 121-122

    3. Silicon Bulk Barrier Diodes Fabricated by LPVPE

      • H. Beneking, L. Vescan, A. Gruhle, J. M. Cloos, M. Marso
      Pages 123-126

    4. Impact Ionization Breakdown of GaAs Current Limiters

      • K. Lehovec
      Pages 127-131

    5. The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor

      • C. Y. Chang, W. C. Liu, Y. H. Wang
      Pages 132-135

    6. Monte Carlo Investigation of the High Electron Mobility Transistor

      • U. Ravaioli, D. K. Ferry
      Pages 136-139

    7. Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs

      • D. J. Frank, P. M. Solomon, D. C. La Tulipe Jr., H. Baratte, C. M. Knoedler, S. L. Wright
      Pages 140-143

    8. Potential Barriers in Doped GaAs by OM-VPE

      • P. Roentgen, G. Fernholz, H. Beneking
      Pages 144-147

    9. Low Noise High Electron Mobility Transistors Grown By MOVPE

      • M. Wolny, P. Chambery, A. Briere, J.-P. Andre
      Pages 148-150

    10. Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison

      • C. Dubon-Chevallier, P. Desrousseaux, A. M. Duchenois, C. Besombes, J. Dangla, C. Bacot et al.
      Pages 151-155

    11. Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction Bipolar Transistors

      • K. Daoud-Ketata, C. Dubon-Chevallier, J. Etrillard, J. F. Bresse
      Pages 156-159

    12. Novel Cryoelectronic Device Concept Based on Magnetically Controlled Current Flow in Bulk Semiconductors

      • J. Mannhart, J. Parisi, R. P. Huebener
      Pages 160-163

    13. InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation

      • J. L. Pelouard, P. Hesto, J. P. Praseuth, L. Goldstein
      Pages 164-167

    14. Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors

      • L. P. Ramberg, P. M. Enquist, Y. K. Chen, F. E. Najjar, L. F. Eastman, E. A. Fitzgerald et al.
      Pages 168-171

    15. Cryogenic GaAs Integrated Circuits Using a Lightly Doped GaAs FET Structure

      • J. Kamdem, M. Henry, J. P. Klein, F. Alexandre, M. Gloanec
      Pages 172-176

    16. GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs

      • T. Asano, K. Tsutsui, H. Ishiwara, S. Furukawa
      Pages 177-181
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Keywords

About this book

In the past, a number of Satellite Conferences have been held in con­ nection with the International Conference on Physics of Semiconductors, covering selected fields of interest. In 1986, when the main conference was held in Stockholm, Sweden, new. phenomena had to be discussed: super­ lattices, hot 'electron phenomena and new device structures for high-speed applications. The aim was to select topics which would be of interest to physicists as well as to electronics engineers. Therefore a Satellite Con­ ference on H!gh-Speed Electronics, Basic Physical Phenomena and Device Principles, was arranged at Saltjobaden, a coastal resort near Stockholm. An organizing committee was established after the first suggestion made by Professor Grimmeiss from the University of Lund, Sweden, and some preliminary discussions on the Conference format. A Program Committee was established to be responsible for the further selection of the invited talks, the regular papers and poster presentation. The aim was to have a broad spectrum of contributions to attract physicists as well as device­ oriented engineers and to stimulate discussions among the participants. These Proceedings contain all oral and poster presentations, with em­ phasis on the invited talks, which give a competent overview of the field. The fast publication by Springer-Verlag has permitted the presentation of an up-to-date survey of the principles of high-speed electronics. Incorpo­ ration in the Springer Series in Electronics and Photonics will enable the book to be distributed worldwide and to reach all interested scientists.

Editors and Affiliations

  • RIFA AB, Stockholm, Sweden

    Bengt Källbäck

  • Institut für Halbleitertechnik, Rhein.-Westf. Technische Hochschule, Aachen, Fed. Rep. of Germany

    Heinz Beneking

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