© 1984

Secondary Ion Mass Spectrometry SIMS IV

Proceedings of the Fourth International Conference, Osaka, Japan, November 13–19, 1983

  • A. Benninghoven
  • J. Okano
  • R. Shimizu
  • H. W. Werner
Conference proceedings

Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 36)

Table of contents

  1. Front Matter
    Pages I-XV
  2. Fundamentals

    1. Front Matter
      Pages 1-1
    2. P. Sigmund
      Pages 2-7
    3. F. Honda, K. Nakajima, Y. Fukuda
      Pages 17-19
    4. Y. Yamamura, S. Nakagawa, S. Enoki
      Pages 20-23
    5. T. Koshikawa, T. Ikuta, R. S. Li
      Pages 31-34
    6. Y. Sekimoto, Y. Igarashi, T. Kawata
      Pages 38-40
    7. W. Frentrup, M. Griepentrog, H. Klose, G. Kreysch, U. Mueller-Jahreis
      Pages 43-45
    8. M. A. Vasilyev, S. P. Chenakin
      Pages 46-48
    9. V. T. Cherepin, A. A. Kosyachkov, I. N. Makeeva
      Pages 57-59
    10. F. M. Kimock, J. P. Baxter, D. L. Pappas, P. H. Kobrin, N. Winograd
      Pages 63-65

About these proceedings


This volume contains full proceedings of the Fourth International Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th, 1983. Coordinated by a local or­ ganizing committee under the auspices of the international organizing com­ mittee, it followed earlier conferences held in MUnster (1977), Stanford (1979), and Budapest (1981). The conference was attended by about 250 participants from 18 countries, and 130 papers including 24 invited ones were presented. Reflecting the rap­ idly expanding activities in the SIMS field, informative papers were pre­ sented containing up-to-date information on SIMS and various related fields. The proceedings focussed upon six main issues: (1) Fundamentals of sput­ tering and secondary ion formation. (2) Recent progress in instrumentation, including submicron SIMS and image processing. (3) SIMS combined with other surface analysis techniques. (4) Outstanding SIMS-related analytical methods such as laser-microprobe SIMS, sputtered neutral mass spectrometry, mass spectrometry of sputtered neutrals by multi-photon resonance ionization, and accelerator-based SIMS. (5) Organic SIMS and FAB which has recently become a rapidly expanding technique in pharmacy, biotechnology, etc. (6) Appl ica­ tions of SIMS to various fields such as metallurgy, geology, and biology, including depth profiling of semiconductors, and analysis of inorganic mate­ rials. As a venue for the exchange of ideas and information concerning all the above issues, the conference proved a great success.


Atom Diffusion Sorption catalyst crystal electron spectroscopy hydrogen isotope mass spectrometry metals microscopy semiconductor spectrometry spectroscopy structure

Editors and affiliations

  • A. Benninghoven
    • 1
  • J. Okano
    • 2
  • R. Shimizu
    • 3
  • H. W. Werner
    • 4
  1. 1.Phsysikalisches Inst.Universität MünsterMünsterFed. Rep. of Germany
  2. 2.College of General EducationOsaka UniversityOsaka 560Japan
  3. 3.Department of Applied PhysicsOsaka UniversityOsaka 565Japan
  4. 4.Philips Research LaboratoriesEindhovenThe Netherlands

Bibliographic information

  • Book Title Secondary Ion Mass Spectrometry SIMS IV
  • Book Subtitle Proceedings of the Fourth International Conference, Osaka, Japan, November 13–19, 1983
  • Editors A. Benninghoven
    J. Okano
    R. Shimizu
    H.W. Werner
  • Series Title Springer Series in Chemical Physics
  • DOI
  • Copyright Information Springer-Verlag Berlin Heidelberg 1984
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Hardcover ISBN 978-3-540-13316-2
  • Softcover ISBN 978-3-642-82258-2
  • eBook ISBN 978-3-642-82256-8
  • Series ISSN 0172-6218
  • Edition Number 1
  • Number of Pages XVI, 506
  • Number of Illustrations 0 b/w illustrations, 0 illustrations in colour
  • Topics Mass Spectrometry
    Physical Chemistry
    Solid State Physics
    Spectroscopy and Microscopy
  • Buy this book on publisher's site
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