Molecular Beam Epitaxy

Fundamentals and Current Status

  • Marian A. Herman
  • Helmut Sitter

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 7)

Table of contents

  1. Front Matter
    Pages I-XIV
  2. Background Information

    1. Marian A. Herman, Helmut Sitter
      Pages 1-31
  3. Technological Equipment

    1. Marian A. Herman, Helmut Sitter
      Pages 33-79
    2. Marian A. Herman, Helmut Sitter
      Pages 81-134
  4. Characterization Methods

    1. Marian A. Herman, Helmut Sitter
      Pages 135-227
  5. MBE Growth Process

    1. Marian A. Herman, Helmut Sitter
      Pages 229-288
    2. Marian A. Herman, Helmut Sitter
      Pages 289-325
    3. Marian A. Herman, Helmut Sitter
      Pages 327-380
  6. Conclusion

    1. Marian A. Herman, Helmut Sitter
      Pages 381-398
  7. Back Matter
    Pages 399-456

About this book

Introduction

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. This monograph discusses the most important aspects of an MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural para- meters of the grown (or growing) field or structure to the technologically relevant parameters of the crystallization procedure. In the present second edition two new fields of activity, which emerged in the 1990s have been addressed. These are: (i) crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and (ii) in-growth control of the MBE crystallization process of strained-layer structures in order to achieve the highly pre- ferred mode of crystallization, the perfect layer-by-layer growth. A substantial part of the "first edition text", which lost its present-day interest has been removed to have sufficiant space for the most current topics in MBE.

Keywords

chemistry epitaxy film material production quantum dot semiconductor semiconductor devices

Authors and affiliations

  • Marian A. Herman
    • 1
    • 2
  • Helmut Sitter
    • 3
  1. 1.Institute of PhysicsPolish Academy of SciencesWarszawaPoland
  2. 2.Institute of Vacuum TechnologyWarszawaPoland
  3. 3.Institut für ExperimentalphysikJohannes Kepler UniversitätLinz/AuhofAustria

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-80060-3
  • Copyright Information Springer-Verlag Berlin Heidelberg 1996
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-80062-7
  • Online ISBN 978-3-642-80060-3
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • About this book
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