© 1989

Amorphous and Crystalline Silicon Carbide II

Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988

  • Mahmud M. Rahman
  • Cary Y.-W. Yang
  • Gary L. Harris
Conference proceedings

Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Table of contents

  1. Front Matter
    Pages I-X
  2. Growth of Crystalline Silicon Carbide

    1. Front Matter
      Pages 1-1
    2. J. A. Powell, L. G. Matus
      Pages 14-19
    3. J. C. Liao, J. L. Crowley, P. H. Klein
      Pages 20-25
    4. T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, T. Niina
      Pages 26-34
    5. W. S. Yoo, S. Nishino, H. Matsunami
      Pages 35-39
    6. M. G. Spencer, G. L. Harris, S. L. Richardson, M. F. Mahmood, A. M. Jones
      Pages 40-41
  3. Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide

    1. Front Matter
      Pages 43-43
    2. M. Nishikuni, H. Dohjoh, K. Ninomiya, N. Nakamura, T. Matsuoka, S. Tsuda et al.
      Pages 54-59
    3. J. Pankove, V. Hornback, S. Sritharan, J. Wilson, S. Asher, R. Dhere et al.
      Pages 60-65
    4. C.-J. Chu, G. D. Soraru, F. Babonneau, J. D. Mackenzie
      Pages 66-71
  4. Characterization of Silicon Carbide

    1. Front Matter
      Pages 73-73
    2. S. Akita, Y. Nakayama, T. Kawamura
      Pages 74-79
    3. A. S. Byrne, M. Ju, T. Asano, M. M. Rahman, C. Y. Yang
      Pages 80-84

About these proceedings


This volume contains written versions of the papers presented at the Second Inter­ national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem­ ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in­ ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.


X-ray crystal electron electron microscopy electron spectroscopy fluid mechanics hydrogen kinetics laser microscopy photoelectron spectroscopy scattering spectroscopy thin films transmission electron microscopy

Editors and affiliations

  • Mahmud M. Rahman
    • 1
  • Cary Y.-W. Yang
    • 1
  • Gary L. Harris
    • 2
  1. 1.Microelectronics LaboratorySanta Clara UniversitySanta ClaraUSA
  2. 2.Materials Science Research Center of ExcellenceHoward UniversityUSA

Bibliographic information