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© 1999

Nitride Semiconductors and Devices

Benefits

  • Covers the major developments in light-emitting Nitride semiconductors

  • Integrates physics, materials science, technology, and applications

  • Covers both theory and practice

  • Includes extensive tabular compilation of properties

  • Reference book for researchers as well as a study text for graduate students in physics, chemistry, materials science and energy

Book

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 32)

Table of contents

  1. Front Matter
    Pages I-XXIV
  2. Hadis Morkoç
    Pages 1-7
  3. Hadis Morkoç
    Pages 8-44
  4. Hadis Morkoç
    Pages 83-148
  5. Hadis Morkoç
    Pages 149-190
  6. Hadis Morkoç
    Pages 191-215
  7. Hadis Morkoç
    Pages 233-266
  8. Hadis Morkoç
    Pages 267-294
  9. Hadis Morkoç
    Pages 295-339
  10. Hadis Morkoç
    Pages 340-378
  11. Hadis Morkoç
    Pages 379-459
  12. Back Matter
    Pages 461-489

About this book

Introduction

A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn­ thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim­ al. [3] in 1959 employed the same technique to produce small cry­ meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans­ port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli­ berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro­ as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.

Keywords

Device technology Doping Physics Semiconductor Wide bandgap

Authors and affiliations

  1. 1.Department of Electrical EngineeringVirginia Commonwealth UniversityRichmondUSA

Bibliographic information

  • Book Title Nitride Semiconductors and Devices
  • Authors Hadis Morkoç
  • Series Title Springer Series in Materials Science
  • DOI https://doi.org/10.1007/978-3-642-58562-3
  • Copyright Information Springer-Verlag Berlin Heidelberg 1999
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Hardcover ISBN 978-3-540-64038-7
  • Softcover ISBN 978-3-642-63647-9
  • eBook ISBN 978-3-642-58562-3
  • Series ISSN 0933-033X
  • Series E-ISSN 2196-2812
  • Edition Number 1
  • Number of Pages XXIV, 489
  • Number of Illustrations 267 b/w illustrations, 7 illustrations in colour
  • Topics Electronics and Microelectronics, Instrumentation
    Optical and Electronic Materials
  • Buy this book on publisher's site
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