Nitride Semiconductors and Devices

  • Hadis Morkoç

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 32)

Table of contents

  1. Front Matter
    Pages I-XXIV
  2. Hadis Morkoç
    Pages 1-7
  3. Hadis Morkoç
    Pages 8-44
  4. Hadis Morkoç
    Pages 83-148
  5. Hadis Morkoç
    Pages 149-190
  6. Hadis Morkoç
    Pages 191-215
  7. Hadis Morkoç
    Pages 233-266
  8. Hadis Morkoç
    Pages 267-294
  9. Hadis Morkoç
    Pages 295-339
  10. Hadis Morkoç
    Pages 340-378
  11. Hadis Morkoç
    Pages 379-459
  12. Back Matter
    Pages 461-489

About this book


A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn­ thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim­ al. [3] in 1959 employed the same technique to produce small cry­ meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans­ port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli­ berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro­ as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.


Device technology Doping Physics Semiconductor Wide bandgap

Authors and affiliations

  • Hadis Morkoç
    • 1
  1. 1.Department of Electrical EngineeringVirginia Commonwealth UniversityRichmondUSA

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag Berlin Heidelberg 1999
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-63647-9
  • Online ISBN 978-3-642-58562-3
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • Buy this book on publisher's site
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