High Permittivity Gate Dielectric Materials

  • Samares Kar

Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 43)

Table of contents

  1. Front Matter
    Pages i-xxxii
  2. Samares Kar
    Pages 1-45
  3. Akira Nishiyama
    Pages 153-181
  4. Masaaki Niwa
    Pages 183-234
  5. Jamie K. Schaeffer
    Pages 235-262
  6. Akira Toriumi, Toshihide Nabatame
    Pages 263-282
  7. Chadwin Young
    Pages 283-308
  8. Daniel J. Lichtenwalner
    Pages 343-369
  9. H. Jörg Osten
    Pages 395-423
  10. Michel Houssa, Peide Ye, Marc Heyns
    Pages 425-457
  11. Back Matter
    Pages 459-489

About this book


"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."


Advanced gate stacks Dielectric materials Gate dielectrics High permittivity Nano MOSFETs

Editors and affiliations

  • Samares Kar
    • 1
  1. 1.Dept. Electrical EngineeringIndian Institute of TechnologyKanpurIndia

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag Berlin Heidelberg 2013
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Engineering Engineering (R0)
  • Print ISBN 978-3-642-36534-8
  • Online ISBN 978-3-642-36535-5
  • Series Print ISSN 1437-0387
  • Buy this book on publisher's site
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