Design and Realization of Novel GaAs Based Laser Concepts

  • Tim David Germann

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Tim David Germann
    Pages 1-4
  3. Tim David Germann
    Pages 5-15
  4. Tim David Germann
    Pages 17-26
  5. Tim David Germann
    Pages 27-53
  6. Tim David Germann
    Pages 55-79
  7. Tim David Germann
    Pages 135-138
  8. Back Matter
    Pages 139-150

About this book


Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas.
This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.


GaAs-based Nanolaser High Speed EOM VCSEL MOCVD QD Growth MOVPE QD Growth QD VECSEL Quantum Dot Laser SML VECSEL Submonolayer Laser

Authors and affiliations

  • Tim David Germann
    • 1
  1. 1.Institut für Festkörperphysik, Sekretariat EW 5-2Technische Universität BerlinBerlinGermany

Bibliographic information

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