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GaN-Based Laser Diodes

Towards Longer Wavelengths and Short Pulses

  • Wolfgang G.┬áScheibenzuber

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Wolfgang G. Scheibenzuber
    Pages 1-4
  3. Wolfgang G. Scheibenzuber
    Pages 5-19
  4. Wolfgang G. Scheibenzuber
    Pages 21-28
  5. Wolfgang G. Scheibenzuber
    Pages 37-54
  6. Wolfgang G. Scheibenzuber
    Pages 55-66
  7. Wolfgang G. Scheibenzuber
    Pages 67-84
  8. Wolfgang G. Scheibenzuber
    Pages 85-87
  9. Back Matter
    Pages 89-95

About this book

Introduction

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

Keywords

Green Laser Diode Optical Gain in Laser Diodes Picosecond Laser Self-Pulsation Semipolar GaN

Authors and affiliations

  • Wolfgang G.┬áScheibenzuber
    • 1
  1. 1., Department of Microsystems EngineeringUniversity of FreiburgFreiburgGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-24538-1
  • Copyright Information Springer-Verlag Berlin Heidelberg 2012
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-642-24537-4
  • Online ISBN 978-3-642-24538-1
  • Buy this book on publisher's site
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