© 2012

GaN and ZnO-based Materials and Devices

  • Stephen Pearton

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 156)

Table of contents

  1. Front Matter
    Pages i-xvii
  2. Qian Sun, Jung Han
    Pages 1-27
  3. B. N. Pantha, J. Y. Lin, H. X. Jiang
    Pages 29-81
  4. Michael Shur, Max Shatalov, Alex Dobrinsky, Remis Gaska
    Pages 83-120
  5. Xian-An Cao
    Pages 121-152
  6. F. Ren, B. H. Chu, K. H. Chen, C. Y. Chang, Victor Chen, S. J. Pearton
    Pages 165-207
  7. Wayne Johnson, Edwin L. Piner
    Pages 209-237
  8. Alexander Y. Polyakov
    Pages 251-294
  9. Ruei-San Chen, Abhijit Ganguly, Li-Chyong Chen, Kuei-Hsien Chen
    Pages 295-315
  10. Elena Flitsyian, Zinovy Dashevsky, Leonid Chernyak
    Pages 317-347
  11. Michael Snure, David Toledo, Paul Slusser, Ashutosh Tiwari
    Pages 349-360
  12. Yicheng Lu, Pavel I. Reyes, Jian Zhong, Hannhong Chen
    Pages 361-411
  13. Jeffrey Davis, Chennupati Jagadish
    Pages 413-434
  14. Pedro Barquinha, Rodrigo Martins, Elvira Fortunato
    Pages 435-476
  15. Back Matter
    Pages 477-485

About this book


The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.


Gallium Nitride Laser Diodes Light-Emitting Diodes Nanowires Solar Cells

Editors and affiliations

  • Stephen Pearton
    • 1
  1. 1., Materials Science and EngineeringUniversity of FloridaGainesvilleUSA

About the editors

Steve Pearton is one of the leaders in the field of GaN research and a co-author of another related successful Springer book.

Bibliographic information

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