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© 2010

Technology of Gallium Nitride Crystal Growth

  • Dirk Ehrentraut
  • Elke Meissner
  • Michal Bockowski

Benefits

  • Summarizes the current state of the art of GaN growth technology

  • Integrates materials science and physical aspects

  • A reference work for researchers and engineers alike

  • May serve as a study text for graduate students in materials sciences

Book

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 133)

Table of contents

  1. Front Matter
    Pages i-xxi
  2. Market for Bulk GaN Crystals

    1. Front Matter
      Pages 1-1
    2. Andrew D. Hanser, Keith R. Evans
      Pages 3-27
  3. Vapor Phase Growth Technology

    1. Front Matter
      Pages 30-30
    2. Akinori Koukitu, Yoshinao Kumagai
      Pages 31-60
    3. B. Łucznik, B. Pastuszka, G. Kamler, I. Grzegory, S. Porowski
      Pages 61-78
    4. Y. Oshima, T. Yoshida, T. Eri, K. Watanabe, M. Shibata, T. Mishima
      Pages 79-96
    5. Paul T. Fini, Benjamin A. Haskell
      Pages 97-117
    6. K. Matsumoto, H. Tokunaga, A. Ubukata, K. Ikenaga, Y. Fukuda, Y. Yano et al.
      Pages 119-133
  4. Solution Growth Technology

    1. Front Matter
      Pages 136-136
    2. R. Doradziński, R. Dwiliński, J. Garczyński, L. P. Sierzputowski, Y. Kanbara
      Pages 137-160
    3. Tadao Hashimoto, Shuji Nakamura
      Pages 161-182
    4. Dirk Ehrentraut, Yuji Kagamitani
      Pages 183-203
  5. Flux Growth Technology

    1. Front Matter
      Pages 207-207
    2. Michal Boćkowski, Pawel Strąk, Izabella Grzegory, Sylwester Porowski
      Pages 207-234
    3. E. Meissner, S. Hussy, J. Friedrich
      Pages 245-273
  6. Characterization of GaN Crystals

    1. Front Matter
      Pages 277-277
    2. Shigefusa F. Chichibu
      Pages 277-293

About this book

Introduction

This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

Keywords

Ammonothermal growth Crystal growth from solution Gallium nitride (GaN) Hydride vapor phase epitaxy (HVPE) Properties of GaN crystal spectroscopy

Editors and affiliations

  • Dirk Ehrentraut
    • 1
  • Elke Meissner
    • 2
  • Michal Bockowski
    • 3
  1. 1.Inst. Materials Research (IMR)Tohoku UniversitySendaiJapan
  2. 2.Integrierte Systeme und, Bauelementetechnologie (IISB)Fraunhofer Institut fürErlangenGermany
  3. 3.Inst. High-Pressure PhysicsPAN WarszawaWarszawaPoland

About the editors

Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and ZnO. He has authored 130 publications in books, journals and conferences and holds 6 patents.

Dr. Elke Meissner graduated from the University of Erlangen, Germany in the field of applied mineralogy. Later she received a PhD from the University of Bayreuth, Germany. She is a senior scientist in the Department of Crystal Growth at the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen and became head of the working group Defect Engineering in 2007. She has a broad background in process properties correlation for advanced materials in various fields like silicon nitride ceramics and applied & experimental mineralogy. Her recent work is strongly focussed on the structural characterization of crystals and crystal layers of novel semiconductors. Dr. Meissner is inventor or co-inventor of 3 international patents and authored more than 50 papers or contributions to journals and conference.

Dr. Michal Bockowski received the M.Sc. Eng. in Solid State Physics from the Warsaw University of Technology, Poland and the Ph.D. in the Chemistry of Solids 1995 from the University Montpellier II, France. He is currently a Research Associate of the Institute of High Pressure Physics of the Polish Academy of Sciences and a technologist at TopGaN Ltd., Poland. He has authored >120 publications in journals and conferences and holds 2 international patents.

Bibliographic information

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