Dilute III-V Nitride Semiconductors and Material Systems

Physics and Technology

  • Ayşe Erol

Part of the Materials Science book series (SSMATERIALS, volume 105)

Table of contents

  1. Front Matter
    Pages I-XXXII
  2. K. M. Yu, M. A. Scarpulla, W. Shan, J. Wu, J. W. Beeman, J. Jasinski et al.
    Pages 1-34
  3. J. Miguel-Sánchez, Á. Guzmán, A. Hierro, E. Muñoz, U. Jahn, A. Trampert
    Pages 35-63
  4. W. Walukiewicz, K. Alberi, J. Wu, W. Shan, K. M. Yu, J. W. Ager III
    Pages 65-89
  5. I. Gorczyca, P. Boguslawski, A. Svane, N. E. Christensen
    Pages 91-121
  6. M. Herrera, D. Gonzalez, M. Hopkinson, H. Y. Liu, R. Garcia
    Pages 199-221
  7. M. P. Vaughan, B. K. Ridley
    Pages 255-281
  8. X. Marie, D. Lagarde, V. Kalevich, T. Amand
    Pages 283-299
  9. M. Güngerich, P. J. Klar, W. Heimbrodt, G. Weiser, A. Lindsay, C. Harris et al.
    Pages 343-367
  10. K. Volz, W. Stolz, J. Teubert, P. J. Klar, W. Heimbrodt, F. Dimroth et al.
    Pages 369-404
  11. D. Alexandropoulos, M. J. Adams, J. Rorison
    Pages 419-447
  12. J. B. Héroux, W. I. Wang
    Pages 563-586
  13. Back Matter
    Pages 587-592

About this book


A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.


Modulator development dynamics electronic properties electronic structure electronics laser nanostructure optics optoelectronics physics quantum wells semiconductor solar cell spectroscopy

Editors and affiliations

  • Ayşe Erol
    • 1
  1. 1.Physics Department, Solid-State Physics DivisionIstanbul UniversityVezneciler, IstanbulTurkey

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