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The Physics of Semiconductor Devices

Proceedings of IWPSD 2017

  • Conference proceedings
  • © 2019

Overview

Editors:
  1. R. K. Sharma

    1. Solid State Physics Laboratory, Delhi, India

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  2. D.S. Rawal

    1. Solid State Physics Laboratory, Delhi, India

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    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Proceedings in Physics (SPPHY, volume 215)

Included in the following conference series:

Conference proceedings info: IWPSD 2017.

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Table of contents (196 papers)

  1. 2D Materials Organic Semiconductors and Display Technologies

    1. Effect of Pulsed Electric Field Annealing on P3HT: PCBM Inverted Solar Cell Structure

      • Chinmay N. Oak, S. Sundar Kumar Iyer
      Pages 117-122

    2. Towards High Performance Large Area Two Color Hybrid White Organic Light Emitting Diodes for Lighting Applications

      • Madhu Seetharaman, Asha Awasthi, Jaya Sandhya Meenakshinathan, Gaurav Garg, Akanksha Mohan, Krishna Manohara et al.
      Pages 123-131

    3. Surface Enhanced IR Absorption and Raman Detection of Tryptophan Amino Acids Over Silver Nanoislands Deposited on Graphene

      • Preeti Garg, Praveen Sahoo, R. Raman, R. K. Soni
      Pages 133-138

    4. Synthesis, Characterization and Temperature Dependence of Conductivity in Poly (o-toluidine)

      • Navdeep Sharma, Atul Kapil
      Pages 139-148

    5. Solvent Mixture Formulation for Inkjet Printable Light Emitting Polymer with Pixdro LP50-Ink Formulation for Inkjet Printing of MEH: PPV

      • Svetlana P. Jose, Krishnamanohara, Madhu Seetharaman, Dennis Cherian, Chinmay Bapat, S. Juliane Tripathi et al.
      Pages 149-154

    6. Transport Properties and Sub-band Modulation of the SWCNT Based Nano-scale Transistors

      • Surender Pratap, Niladri Sarkar
      Pages 155-162

  2. III-Nitride: Materials and Devices

    1. Front Matter

      Pages 163-163
      Download chapter PDF

    2. Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate

      • Madhulika, Himanshu Pandey, Meenu Garg, Neelu Jain, Sanjeev Kumar, Amit Malik et al.
      Pages 165-170

    3. Device Optimization of E-Mode N-Polar GaN MOS-HEMT for Low Noise RF and Microwave Applications

      • D. K. Panda, T. R. Lenka
      Pages 171-176

    4. 60Coγ Irradiation Effects on I–V Characteristics of AlGaN/GaN Schottky Diodes

      • Chandan Sharma, Robert Laishram, Amit, D. S. Rawal, Seema Vinayak, Rajendra Singh
      Pages 177-181

    5. Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures

      • Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bag, Dhrubes Biswas
      Pages 183-186

    6. Effect of Surface Treatments on the Evolution of Microstructures in GaN Thin Films and GaN/AlGaN/GaN Heterostructures

      • Mansi Agrawal, B. R. Mehta, R. Muralidharan
      Pages 187-190

    7. Effect of Argon Plasma Treatment on Ohmic Contact Formation in AlGaN/GaN HEMTs

      • Sonalee Kapoor, Robert Laishram, Hemant Saini, Somna Mahajan, Rupesh Kumar Chaubey, D. S. Rawal et al.
      Pages 191-198

    8. Investigation on the Variation of Sheet Resistance of RF Deposited Nichrome Thin Films with Deposition Parameters

      • Ajay Kumar Visvkarma, Robert Laishram, Hemant Kumar Saini, Rajeev Kumar Sawal, Sonalee Kapoor, D. S. Rawal
      Pages 199-203

    9. A Physics Based Analytical Model for the Threshold Voltage of a Normally-off AlGaN/GaN FinFET

      • Punyabrata Ghatak, Debashis Dutta, Navakanta Bhat
      Pages 205-218

    10. Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy

      • Ayush Khandelwal, Gourab Dutta, Amitava DasGupta, Nandita DasGupta
      Pages 219-223

    11. Development of GaN HEMTs Based Biosensor

      • N. Chaturvedi, S. Mishra, S. Dhakad, N. Sharma, K. Singh, N. Chaturvedi et al.
      Pages 225-229

    12. Performance of Wide Band Gap Semiconductors Impatts at THz Frequencies

      • S. P. Pati
      Pages 231-233

    13. 1.7–2.1 GHz GaN Linear Power Amplifier

      • Ashish Jindal, Rajiv, Parul Gupta, Umakant Goyal, S. K. Tomer, Meena Mishra et al.
      Pages 235-239

    14. Computation of Electronic and Optical Properties of GaAsNSb with 16 Band k dot p Model

      • Indranil Mal, Asish Hazra, D. P. Samajdar, T. D. Das
      Pages 241-248
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Other volumes

  1. The Physics of Semiconductor Devices

Keywords

About this book

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.


The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.


Editors and Affiliations

  • Solid State Physics Laboratory, Delhi, India

    R. K. Sharma, D.S. Rawal

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