Advertisement

© 2018

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

  • Gaudenzio Meneghesso
  • Matteo Meneghini
  • Enrico Zanoni
Book

Part of the Integrated Circuits and Systems book series (ICIR)

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Joff Derluyn, Marianne Germain, Elke Meissner
    Pages 1-28
  3. Chang Soo Suh
    Pages 29-49
  4. Srabanti Chowdhury, Dong Ji
    Pages 51-74
  5. Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin, Isabella Rossetto
    Pages 75-99
  6. Kenichiro Tanaka, Ayanori Ikoshi, Tetsuzo Ueda
    Pages 101-122
  7. Fred Wang, Bo Liu
    Pages 153-180
  8. David J. Perreault, Charles R. Sullivan, Juan M. Rivas
    Pages 181-223
  9. Back Matter
    Pages 225-232

About this book

Introduction

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.


  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
  • Enables design of smaller, cheaper and more efficient power supplies.

Keywords

Gallium Nitride GaN device physics GaN for Power Conversion GaN transistors GaN Reliability

Editors and affiliations

  • Gaudenzio Meneghesso
    • 1
  • Matteo Meneghini
    • 2
  • Enrico Zanoni
    • 3
  1. 1.Department of Information EngineeringUniversity of Padova - DEIPadovaItaly
  2. 2.Department of Information EngineeringUniversity of Padova - DEIPadovaItaly
  3. 3.Department of Information EngineeringUniversity of Padova - DEIPadovaItaly

About the editors

Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Bibliographic information

  • Book Title Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
  • Editors Gaudenzio Meneghesso
    Matteo Meneghini
    Enrico Zanoni
  • Series Title Integrated Circuits and Systems
  • Series Abbreviated Title Integrated Circuits,Systems
  • DOI https://doi.org/10.1007/978-3-319-77994-2
  • Copyright Information Springer International Publishing AG, part of Springer Nature 2018
  • Publisher Name Springer, Cham
  • eBook Packages Engineering Engineering (R0)
  • Hardcover ISBN 978-3-319-77993-5
  • Softcover ISBN 978-3-030-08594-0
  • eBook ISBN 978-3-319-77994-2
  • Series ISSN 1558-9412
  • Edition Number 1
  • Number of Pages XIII, 232
  • Number of Illustrations 18 b/w illustrations, 165 illustrations in colour
  • Topics Circuits and Systems
    Electronic Circuits and Devices
    Optical and Electronic Materials
  • Buy this book on publisher's site
Industry Sectors
Automotive
Biotechnology
Electronics
IT & Software
Telecommunications
Energy, Utilities & Environment
Aerospace
Oil, Gas & Geosciences
Engineering