Epitaxial Growth of III-Nitride Compounds

Computational Approach

  • Takashi Matsuoka
  • Yoshihiro Kangawa

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 269)

Table of contents

  1. Front Matter
    Pages i-ix
  2. Tomonori Ito
    Pages 1-5
  3. Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds

    1. Front Matter
      Pages 7-7
    2. Tomonori Ito, Toru Akiyama
      Pages 9-34
  4. Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds

  5. Back Matter
    Pages 219-223

About this book


This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.


Fundamental Growth Processes III-Nitride Semiconductors Dislocation Core Structure Adsorption-Desorption Behaviour Nonpolar and Semipolar Orientations Surface Phase Diagram Empirical Interatomic Potentials Monte Carlo Simulations

Editors and affiliations

  • Takashi Matsuoka
    • 1
  • Yoshihiro Kangawa
    • 2
  1. 1.Institute for Materials ResearchTohoku UniversitySendaiJapan
  2. 2.Research Institute for Applied MechanicsKyushu UniversityKasuga, FukuokaJapan

Bibliographic information

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