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Semiconductor Power Devices

Physics, Characteristics, Reliability

  • Josef Lutz
  • Heinrich Schlangenotto
  • Uwe Scheuermann
  • Rik De Doncker

Table of contents

  1. Front Matter
    Pages i-xix
  2. Josef Lutz, Uwe Scheuermann, Heinrich Schlangenotto, Rik De Doncker
    Pages 1-20
  3. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 21-99
  4. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 101-148
  5. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 149-200
  6. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 201-270
  7. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 271-293
  8. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 295-311
  9. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 313-340
  10. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 341-390
  11. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 391-425
  12. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 427-488
  13. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 489-581
  14. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 583-636
  15. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 637-665
  16. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
    Pages 667-687
  17. Back Matter
    Pages 689-714

About this book

Introduction

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.

This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

Keywords

Fast Diodes IGBT MOFSET Packaging Technology Power Electronics

Authors and affiliations

  • Josef Lutz
    • 1
  • Heinrich Schlangenotto
    • 2
  • Uwe Scheuermann
    • 3
  • Rik De Doncker
    • 4
  1. 1.Chair Power Electronics and Electromagnetic Compatibility, Faculty of ET/ITChemnitz University of TechnologyChemnitzGermany
  2. 2.Neu-IsenburgGermany
  3. 3.Semikron Elektronik GmbH & Co. KGNurembergGermany
  4. 4.Chair Power Generation and Storage Systems, Faculty of ET/ITE.ON ERC, RWTH Aachen UniversityAachenGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-70917-8
  • Copyright Information Springer International Publishing AG 2018
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-70916-1
  • Online ISBN 978-3-319-70917-8
  • Buy this book on publisher's site
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