Advertisement

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets

  • María Ángela Pampillón Arce

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xxiii
  2. María Ángela Pampillón Arce
    Pages 1-20
  3. María Ángela Pampillón Arce
    Pages 21-39
  4. María Ángela Pampillón Arce
    Pages 41-62
  5. María Ángela Pampillón Arce
    Pages 63-75
  6. María Ángela Pampillón Arce
    Pages 77-108
  7. María Ángela Pampillón Arce
    Pages 109-124
  8. María Ángela Pampillón Arce
    Pages 125-140
  9. María Ángela Pampillón Arce
    Pages 141-153
  10. María Ángela Pampillón Arce
    Pages 155-157
  11. Back Matter
    Pages 159-164

About this book

Introduction

This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.

Keywords

High Permittivity Dielectrics MOSFET MIS Devices High Pressure Sputtering Plasma Oxidation InP Substrates Scavenging Effect Gadolinium Oxide Scandium Oxide Gadolinium Scandate

Authors and affiliations

  • María Ángela Pampillón Arce
    • 1
  1. 1.Department of Física Aplicada III: Electricidad y Electrónica, Facultad de Ciencias FísicasThe Complutense University of MadridMadridSpain

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-66607-5
  • Copyright Information Springer International Publishing AG 2017
  • Publisher Name Springer, Cham
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-319-66606-8
  • Online ISBN 978-3-319-66607-5
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
  • Buy this book on publisher's site
Industry Sectors
Chemical Manufacturing
Consumer Packaged Goods
Aerospace
Oil, Gas & Geosciences