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In Search of the Next Memory

Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories

  • Roberto Gastaldi
  • Giovanni Campardo

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Roberto Bez
    Pages 1-5
  3. Roberto Gastaldi
    Pages 47-87
  4. Roberto Gastaldi
    Pages 89-127
  5. Roberto Gastaldi
    Pages 129-151
  6. Alessandro Cabrini, Andrea Fantini, Guido Torelli
    Pages 153-183
  7. Paolo Amato, Marco Sforzin
    Pages 185-228
  8. Roberto Gastaldi
    Pages 229-246
  9. Back Matter
    Pages 247-251

About this book

Introduction

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry.  Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to  design is explored: the array organization, sensing and writing circuitry, programming algorithms and  error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered.  Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

Keywords

Basics Memory Circuits CMOS Circuit Design FeRAM Introduction Devices Memory MRAM Non-volatile Memory PCRAM ReRAM Solid State Memories

Editors and affiliations

  • Roberto Gastaldi
    • 1
  • Giovanni Campardo
    • 2
  1. 1.MilanItaly
  2. 2.ST Microelectronics MilanItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-47724-4
  • Copyright Information Springer International Publishing AG 2017
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-47722-0
  • Online ISBN 978-3-319-47724-4
  • Buy this book on publisher's site
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