Charge and Spin Transport in Disordered Graphene-Based Materials

  • Dinh Van Tuan

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xvi
  2. Dinh Van Tuan
    Pages 1-4
  3. Dinh Van Tuan
    Pages 55-113
  4. Dinh Van Tuan
    Pages 115-139
  5. Dinh Van Tuan
    Pages 141-142
  6. Back Matter
    Pages 143-153

About this book


This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.


Amorphous graphene membranes Anderson localization Charge mobility in disordered graphene Graphene transistors simulation Kubo-greenwood conductivity Order N computational methods Quantum spin Hall effect Quantum transport in graphene Spin Hall effect Spin dynamics and relaxation mechanism Weak and strong localization in graphene

Authors and affiliations

  • Dinh Van Tuan
    • 1
  1. 1.and NanotechnologyCatalan Institute of NanoscienceBarcelonaSpain

Bibliographic information

  • DOI
  • Copyright Information Springer International Publishing Switzerland 2016
  • Publisher Name Springer, Cham
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-319-25569-9
  • Online ISBN 978-3-319-25571-2
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
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