© 2015

Hot Carrier Degradation in Semiconductor Devices

  • Tibor Grasser

Table of contents

  1. Front Matter
    Pages i-x
  2. Beyond Lucky Electrons

    1. Front Matter
      Pages 1-1
    2. William McMahon, Yoann Mamy-Randriamihaja, Balaji Vaidyanathan, Tanya Nigam, Ninad Pimparkar
      Pages 3-27
    3. Stewart E. Rauch, Fernando Guarin
      Pages 29-56
    4. Stanislav Tyaginov
      Pages 105-150
    5. Alban Zaka, Pierpaolo Palestri, Quentin Rafhay, Raphael Clerc, Denis Rideau, Luca Selmi
      Pages 151-196
    6. Thomas Aichinger, Michael Nelhiebel
      Pages 231-255
  3. CMOS and Beyond

    1. Front Matter
      Pages 257-257
    2. Jacopo Franco, Ben Kaczer
      Pages 259-285
    3. Moonju Cho, Erik Bury, Ben Kaczer, Guido Groeseneken
      Pages 287-307
    4. Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli et al.
      Pages 309-339
    5. Partha S. Chakraborty, John D. Cressler
      Pages 371-398
  4. Circuits

    1. Front Matter
      Pages 399-399
    2. Vincent Huard, Florian Cacho, Xavier Federspiel, Pascal Mora
      Pages 401-444
    3. A. J. Scholten, B. De Vries, J. Bisschop, G. T. Sasse
      Pages 477-517

About this book


This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

• Describes the intricacies of hot carrier degradation in modern semiconductor technologies;
• Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.;
• Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance.
• Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models.

“Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation. I am emeritus since 2006 and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device function and from compact modeling to detailed Monte Carlo simulations.  This is a must read for anyone interested in the reliability of semiconductor devices.”

Karl Hess
Swanlund Professor Emeritus
University of Illinois, USA

“Very few books can be found with special focus on microelectronics reliability. Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations. It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices.  Engineering professionals, researchers, and students can use this book to save time and learn from the experts, with a quick overview of an important class of semiconductor devices and focus on device reliability physics.”

Steve Chung
Chair Professor
National Chiao Tung University, Taiwan


Degradation of Semiconductor Device Performance Hot Carrier Degradation Reliability Physics and Engineering Semiconductor Device Lifetime Semiconductor Device Reliability

Editors and affiliations

  • Tibor Grasser
    • 1
  1. 1.Institute for MicroelectronicsVienna University of TechnologyWienAustria

About the editors

Tibor Grasser is an Associate Professor at the Institute for Microelectronics for Technische Universität Wien.

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