© 2020

Gallium Oxide

Materials Properties, Crystal Growth, and Devices

  • Masataka Higashiwaki
  • Shizuo Fujita

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 293)

Table of contents

  1. Front Matter
    Pages i-xxviii
  2. Masataka Higashiwaki
    Pages 1-12
  3. Bulk Growth

    1. Front Matter
      Pages 13-13
    2. Zbigniew Galazka
      Pages 15-36
    3. Keigo Hoshikawa
      Pages 37-55
    4. Akito Kuramata, Kimiyoshi Koshi, Shinya Watanabe, Yu Yamaoka
      Pages 57-75
  4. Epitaxial Growth

    1. Front Matter
      Pages 77-77
    2. Akhil Mauze, James Speck
      Pages 79-93
    3. Oliver Bierwagen, Patrick Vogt, Piero Mazzolini
      Pages 95-121
    4. Kohei Sasaki, Shigenobu Yamakoshi, Akito Kuramata
      Pages 123-140
    5. Fikadu Alema, Andrei Osinsky
      Pages 141-170
    6. Yao Yao, Robert F. Davis, Lisa M. Porter
      Pages 171-184
    7. Yoshinao Kumagai, Keita Konishi, Ken Goto, Hisashi Murakami, Bo Monemar
      Pages 185-202
    8. Yuichi Oshima
      Pages 203-230
    9. Shizuo Fujita
      Pages 231-241
    10. Hiroyuki Nishinaka
      Pages 243-255
    11. Kevin D. Leedy
      Pages 257-271
    12. Holger von Wenckstern, Daniel Splith, Marius Grundmann
      Pages 273-291
    13. Hongping Zhao
      Pages 293-306
  5. Materials Properties

    1. Front Matter
      Pages 307-307

About this book


This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.

Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.


Ga2O3 transparent conducting oxide new wide-bandgap semiconductors Gallium Oxide devices Ga2O3 epitaxial growth

Editors and affiliations

  • Masataka Higashiwaki
    • 1
  • Shizuo Fujita
    • 2
  1. 1.National Institute of Information and Communications TechnologyKoganei, TokyoJapan
  2. 2.Graduate School of EngineeringKyoto UniversityKatsura, KyotoJapan

Bibliographic information

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