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Charge Transport in Low Dimensional Semiconductor Structures

The Maximum Entropy Approach

  • Vito Dario Camiola
  • Giovanni Mascali
  • Vittorio Romano
Book
  • 431 Downloads

Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 31)

Also part of the The European Consortium for Mathematics in Industry book sub series (TECMI, volume 31)

Table of contents

  1. Front Matter
    Pages i-xvi
  2. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 1-27
  3. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 29-46
  4. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 47-67
  5. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 69-129
  6. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 131-158
  7. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 159-190
  8. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 191-210
  9. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 211-227
  10. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
    Pages 229-283
  11. Back Matter
    Pages 285-337

About this book

Introduction

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

Keywords

Maximum entropy principle charge transport in confined structure simulation of electron devices charge transport in graphene DG-MOSFET

Authors and affiliations

  • Vito Dario Camiola
    • 1
  • Giovanni Mascali
    • 2
  • Vittorio Romano
    • 3
  1. 1.Department of Mathematics and Computer ScienceUniversity of CataniaCataniaItaly
  2. 2.Department of Mathematics and Computer ScienceUniversity of CalabriaArcavacata di RendeItaly
  3. 3.Department of Mathematics and Computer ScienceUniversity of CataniaCataniaItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-030-35993-5
  • Copyright Information Springer Nature Switzerland AG 2020
  • Publisher Name Springer, Cham
  • eBook Packages Mathematics and Statistics
  • Print ISBN 978-3-030-35992-8
  • Online ISBN 978-3-030-35993-5
  • Series Print ISSN 1612-3956
  • Series Online ISSN 2198-3283
  • Buy this book on publisher's site
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