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Long-Term Reliability of Nanometer VLSI Systems

Modeling, Analysis and Optimization

  • Sheldon Tan
  • Mehdi Tahoori
  • Taeyoung Kim
  • Shengcheng Wang
  • Zeyu Sun
  • Saman Kiamehr
Book

Table of contents

  1. Front Matter
    Pages i-xli
  2. New Physics-Based EM Analysis and System-Level Dynamic Reliability Management

    1. Front Matter
      Pages 1-1
    2. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 3-12
    3. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 13-45
    4. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 47-66
    5. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 67-96
    6. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 97-120
    7. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 121-151
    8. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 153-175
    9. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 177-194
    10. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 195-215
    11. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 217-245
    12. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 247-262
    13. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 263-275
  3. Transistor Aging Effects and Reliability

    1. Front Matter
      Pages 277-277
    2. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 279-304
    3. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 305-321
    4. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 323-342
    5. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 343-356
    6. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 357-372
    7. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 373-399
    8. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 401-414
    9. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 415-438
    10. Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr
      Pages 439-455
  4. Back Matter
    Pages 457-460

About this book

Introduction

This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices.  The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction.  Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.

  • Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;
  • Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;
  • Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;
  • Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Keywords

Reliability in nanometer integrated systems Bias Temperature Instability for Devices and Circuits Electromigration in VLSI Interconnects Transistor aging modeling, analysis and mitigation EM-induced dynamic reliability management

Authors and affiliations

  • Sheldon Tan
    • 1
  • Mehdi Tahoori
    • 2
  • Taeyoung Kim
    • 3
  • Shengcheng Wang
    • 4
  • Zeyu Sun
    • 5
  • Saman Kiamehr
    • 6
  1. 1.Department of Computer Science and EngineeringUniversity of CaliforniaRiversideUSA
  2. 2.Karlsruhe Institute of TechnologyKarlsruheGermany
  3. 3.Department of Electrical & Computer EngineeringUniversity of CaliforniaRiversideUSA
  4. 4.Karlsruhe Institute of TechnologyKarlsruheGermany
  5. 5.Department of Electrical & Computer EngineeringUniversity of CaliforniaRiversideUSA
  6. 6.Robert Bosch Starter Generator GmbHStuttgartGermany

Bibliographic information

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