Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide

  • Samuel J.¬†Magorrian

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xii
  2. Samuel J. Magorrian
    Pages 1-11
  3. Samuel J. Magorrian
    Pages 13-33
  4. Samuel J. Magorrian
    Pages 35-60
  5. Samuel J. Magorrian
    Pages 61-81
  6. Samuel J. Magorrian
    Pages 83-84
  7. Back Matter
    Pages 85-87

About this book


This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions.   


Indium Selenide Optical Properties of thin films Tight-Binding Model K.P Theory 2D Materials Film thickness dependence

Authors and affiliations

  • Samuel J.¬†Magorrian
    • 1
  1. 1.National Graphene InstituteUniversity of ManchesterManchesterUK

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