© 1993

Compound and Josephson High-Speed Devices

  • Takahiko Misugi
  • Akihiro Shibatomi

Part of the Microdevices book series (MDPF)

Table of contents

  1. Front Matter
    Pages i-xii
  2. Takahiko Misugi, Akihiro Shibatomi
    Pages 1-8
  3. Shin-ichi Akai, Masamichi Yokogawa
    Pages 9-61
  4. Hideaki Kohzu, Tsutomu Noguchi
    Pages 63-81
  5. Masahiro Hirayama, Kazuyoshi Asai, Takashi Mizutani
    Pages 83-139
  6. Kazuo Kondo, Junji Komeno
    Pages 141-169
  7. Masayuki Abe, Takashi Mimura
    Pages 171-213
  8. Tadao Ishibashi
    Pages 215-253
  9. Hisao Hayakawa, Seigo Kotani
    Pages 255-295
  10. Back Matter
    Pages 297-306

About this book


In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh­ speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom­ munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.


analog heterojunction bipolar transistor integrated circuit material semiconductor transistor

Editors and affiliations

  • Takahiko Misugi
    • 1
  • Akihiro Shibatomi
    • 2
  1. 1.Fujitsu Techno Research Ltd.Kawasaki 211Japan
  2. 2.Fujitsu Laboratories LimitedAtsugiJapan

Bibliographic information

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