© 1994

Coherent Optical Interactions in Semiconductors

  • R. T. Phillips

Part of the NATO ASI Series book series (NSSB, volume 330)

Table of contents

  1. Front Matter
    Pages i-ix
  2. J. Kuhl, E. J. Mayer, G. Smith, R. Eccleston, D. Bennhardt, P. Thomas et al.
    Pages 1-31
  3. T. Kuhn, E. Binder, F. Rossi, A. Lohner, K. Rick, P. Leisching et al.
    Pages 33-62
  4. R. Binder, Y. Z. Hu, A. Knorr, M. Lindberg, S. W. Koch
    Pages 63-90
  5. W. von der Osten, V. Langer, H. Stolz
    Pages 111-136
  6. Duncan G. Steel, Hailin Wang, Min Jiang, Kyle Ferrio, Steven Cundiff
    Pages 157-179
  7. Erik T. J. Nibbering, Douwe A. Wiersma, Koos Duppen
    Pages 181-197
  8. J. Feldmann, G. von Plessen, T. Meier, P. Thomas, E. O. Göbel, K. W. Goossen et al.
    Pages 223-243
  9. J.-Y. Bigot, M.-A. Mycek, S. Weiss, R. G. Ulbrich, D. S. Chemla
    Pages 245-260
  10. A. Uhrig, U. Woggon, M. Portuné, V. Sperling, C. Klingshirn
    Pages 261-265
  11. B. Deveaud, B. Sermage, D. S. Katzer
    Pages 267-272
  12. M. Jütte, H. Stolz, W. von der Osten, J. Söllner, K.-P. Geyzers, M. Heuken et al.
    Pages 277-281
  13. T. Rappen, U. Peter, W. Schäfer, M. Wegener
    Pages 283-287
  14. G. von Plessen, M. Koch, J. Feldmann, E. O. Göbel, P. Thomas, J. Shah et al.
    Pages 289-293
  15. J. Erland, I. Balslev, J. M. Hvam
    Pages 295-299

About this book


The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.


Exciton Semiconductor Signal development model semiconductors spectroscopy

Editors and affiliations

  • R. T. Phillips
    • 1
  1. 1.University of CambridgeCambridgeUK

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