Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures

1. Advanced Materials Technology for the Next Decade’s OEICs

   • M. Razeghi, O. Acher

   Pages 351-373

2. Optical Properties of Ge-Si Superlattices

   • T. P. Pearsall

   Pages 375-397

3. Ultra-Fast Optical Probes in Quantum Wells and Superlattices

   • Benoit Deveaud

   Pages 399-420

4. Ballistic Electron Transport in the Plane

   • M. Heiblum

   Pages 421-423

5. Static and Dynamic Conductivity of Inversion Electrons in Lateral Superlattices

   • Jörg P. Kotthaus

   Pages 425-426

6. Quantum Ballistic Electron Transport and Conductance Quantization in a Constricted Two-Dimensional Electron Gas

   • B. J. van Wees

   Pages 427-428

7. Adiabatic Transport in the Fractional Quantum Hall Regime

   • Leo P. Kouwenhoven

   Pages 429-430

8. Ballistic Electronic Transport in GaAs-AlGaAs Heterojunctions

   • M. Pepper

   Pages 431-434

9. Back Matter

   Pages 435-477

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This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.

• Potential
• electrons
• integrated circuit
• modeling
• quantum mechanics
• scattering
• transmission

• Nottingham University, Nottingham, UK

  J. M. Chamberlain, Laurence Eaves

• CNRS-INSA, Toulouse, France

  Jean-Claude Portal

• CNRS-SNCI, Grenoble, France

  Jean-Claude Portal

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