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Science and Engineering of One- and Zero-Dimensional Semiconductors

  • Book
  • © 1990

Overview

Editors:
  1. Steven P. Beaumont

    1. University of Glasgow, Glasgow, Scotland, UK

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  2. Clivia M. Sotomayor Torres

    1. University of Glasgow, Glasgow, Scotland, UK

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    You can also search for this editor in PubMed   Google Scholar

Part of the book series: NATO Science Series B: (NSSB, volume 214)

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Table of contents (31 chapters)

  2. Optical Properties of 1- and 1-D Structures

    1. Understanding Quantum Confinement in Zero-Dimensional Nanostructures: Optical and Transport Properties

      • Garnett W. Bryant
      Pages 243-254

    2. Exciton-Polaritons in Quantum Wells and Quantum Wires

      • D. Heitmann, M. Kohl, P. Grambow, K. Ploog
      Pages 255-262

    3. Radiative Recombination in Free Standing Quantum Boxes

      • S. R. Andrews, H. Arnot, T. M. Kerr, P. K. Rees, S. P. Beaumont
      Pages 263-275

    4. Optical Emission from Quantum Wires

      • A. Forchel, B. E. Maile, H. Leier, G. Mayer, R. Germann
      Pages 277-295

    5. Raman Scattering and Photoluminescence of GaAs-Based Nanostructures

      • C. M. Sotomayor Torres, M. Watt, H. E. G. Arnot, R. Glew, W. E. Leitch, A. H. Kean et al.
      Pages 297-307

    6. On the Impact of Low-Dimensionality in Quantum-Well, Wire, Dot-Semiconductor Lasers

      • Claude Weisbuch, Julien Nagle
      Pages 309-316

  3. 2-Dimensional Systems

    1. Excitons in Low Dimensional Semiconductors

      • L. Viña, E. E. Mendez, W. I. Wang, J. C. Maan, M. Potemski, G. E. W. Bauer
      Pages 317-323

    2. Resonant Transverse Magnetotunneling Through Double Barrier Systems

      • G. Platero, C. Tejedor, L. Brey, P. Schulz
      Pages 325-333

  4. Back Matter

    Pages 335-339
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Keywords

About this book

This volume comprises the proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1- and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of the NATO International Scientific Exchange Program. There is a wealth of scientific activity on the properties of two-dimensional semiconductors arising largely from the ease with which such structures can now be grown by precision epitaxy techniques or created by inversion at the silicon-silicon dioxide interface. Only recently, however, has there burgeoned an interest in the properties of structures in which carriers are further confined with only one or, in the extreme, zero degrees of freedom. This workshop was one of the first meetings to concentrate almost exclusively on this subject: that the attendance of some forty researchers only represented the community of researchers in the field testifies to its rapid expansion, which has arisen from the increasing availability of technologies for fabricating structures with small enough (sub - O. I/tm) dimensions. Part I of this volume is a short section on important topics in nanofabrication. It should not be assumed from the brevity of this section that there is little new to be said on this issue: rather that to have done justice to it would have diverted attention from the main purpose of the meeting which was to highlight experimental and theoretical research on the structures themselves.

Editors and Affiliations

  • University of Glasgow, Glasgow, Scotland, UK

    Steven P. Beaumont, Clivia M. Sotomayor Torres

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