© 1990

Science and Engineering of One- and Zero-Dimensional Semiconductors

  • Steven P. Beaumont
  • Clivia M. Sotomayor Torres

Part of the NATO ASI Series book series (NSSB, volume 214)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Fabrication of 1- and 0-D Structures

    1. Y. D. Galeuchet, P. Roentgen, S. Nilsson, V. Graf
      Pages 1-9
    2. C. D. W. Wilkinson, S. P. Beaumont
      Pages 11-16
    3. H. Launois, D. Mailly, Y. Jin, F. Pardo, A. Izrael, J. Y. Marzin et al.
      Pages 17-24
  3. Transport in 1- and 0-d Structures

    1. T. J. Thornton, M. L. Roukes, A. Scherer, B. van der Gaag
      Pages 25-31
    2. T. P. Smith III, H. Arnot, J. A. Brum, L. L. Chang, L. Esaki, A. B. Fowler et al.
      Pages 33-39
    3. P. C. Main, R. P. Taylor, L. Eaves, S. Thoms, S. P. Beaumont, C. D. W. Wilkinson
      Pages 51-61
    4. C. J. P. M. Harmans, B. J. van Wees, L. P. Kouwenhoven, J. G. Williamson
      Pages 63-69
    5. M. L. Roukes, T. J. Thornton, A. Scherer, J. A. Simmons, B. P. Van der Gaag, E. D. Beebe
      Pages 71-82
    6. P. G. N. de Vegvar, G. Timp, P. M. Mankiewich, R. Behringer
      Pages 91-98
    7. François M. Peeters
      Pages 107-120
    8. Gerrit E. W. Bauer, Aart A. van Gorkum
      Pages 133-138
    9. M. A. Reed, J. H. Luscombe, J. N. Randall, W. R. Frensley, R. J. Aggarwal, R. J. Matyi et al.
      Pages 139-154
    10. Bernhard Kramer, Jan Mašek
      Pages 155-170
    11. L. P. Kouwenhoven, B. J. van Wees, C. J. P. M. Harmans, J. G. Williamson
      Pages 171-178
  4. Periodic 1- and 0-D Structures

    1. D. A. Antoniadis, K. Ismail, Henry I. Smith
      Pages 179-190

About this book


This volume comprises the proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1- and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of the NATO International Scientific Exchange Program. There is a wealth of scientific activity on the properties of two-dimensional semiconductors arising largely from the ease with which such structures can now be grown by precision epitaxy techniques or created by inversion at the silicon-silicon dioxide interface. Only recently, however, has there burgeoned an interest in the properties of structures in which carriers are further confined with only one or, in the extreme, zero degrees of freedom. This workshop was one of the first meetings to concentrate almost exclusively on this subject: that the attendance of some forty researchers only represented the community of researchers in the field testifies to its rapid expansion, which has arisen from the increasing availability of technologies for fabricating structures with small enough (sub - O. I/tm) dimensions. Part I of this volume is a short section on important topics in nanofabrication. It should not be assumed from the brevity of this section that there is little new to be said on this issue: rather that to have done justice to it would have diverted attention from the main purpose of the meeting which was to highlight experimental and theoretical research on the structures themselves.


electronic properties exciton laser optical properties semiconductor spectroscopy

Editors and affiliations

  • Steven P. Beaumont
    • 1
  • Clivia M. Sotomayor Torres
    • 1
  1. 1.University of GlasgowGlasgowScotland, UK

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