Рост Кристаллоь / Rost Kristallov / Growth of Crystals

Volume 12

  • A. A. Chernov

Table of contents

  1. Front Matter
    Pages i-x
  2. Growth from Vapor

    1. Front Matter
      Pages 1-1
    2. B. V. Deryagin, B. V. Spitsyn
      Pages 25-30
    3. S. I. Radautsan, Yu. I. Maksimov
      Pages 38-41
    4. G. A. Bootsma, W. F. Knippenberg, G. Verspui
      Pages 42-50
    5. V. S. Postnikov, S. A. Ammer, K. S. Kutakov, V. N. Petrov, A. F. Tatarenkov, A. A. Shchetinin
      Pages 51-55
    6. C. E. Ryan, I. Berman, R. C. Marshall, J. R. Littler
      Pages 56-60
    7. R. C. Marshall, J. R. Littler, C. E. Ryan, I. Berman, J. J. Hawley
      Pages 61-66
    8. P. V. Pavlov, E. I. Zorin, D. I. Tetel’baum, G. M. Ryzhkov, V. P. Lesnikov
      Pages 67-70
  3. Growth from Solution and Hydrothermal Synthesis

    1. Front Matter
      Pages 71-71
    2. L. I. Tsinober, V. E. Khadzhi, L. A. Gordienko, L. T. Litvin
      Pages 73-84
    3. E. N. Belova, I. N. Dem’yanets, V. V. Ilyukhin, B. A. Maksimov, Yu. A. Kharitonov
      Pages 85-89
    4. B. N. Litvin, V. S. Fonin, D. Yu. Pushcharovskii, E. A. Pobedimskaya
      Pages 94-98
    5. R. Boistelle, M. Mathieu, B. Simon
      Pages 99-102
    6. A. A. Chernov, V. F. Parvov, S. M. Eskin, V. V. Sipyagin
      Pages 103-107
    7. I. V. Melikhov, B. D. Nebylitsyn
      Pages 108-115
    8. A. R. Patel, H. L. Bhat
      Pages 122-125
    9. N. S. Stepanova, V. N. Portnov, S. S. Fridman, Yu. M. Fishman, A. V. Belyustin
      Pages 131-134
    10. T. P. Ul’yanova, Yu. O. Punin, T. G. Petrov
      Pages 135-140
  4. Growth from Solution in Melts

    1. Front Matter
      Pages 141-141
    2. K. B. Seiranyan, R. O. Sharkhatunyan, B. P. Sobolev
      Pages 155-157
    3. A. A. Meier, L. P. Fomchenkov, V. A. Lomonov, N. G. Gorashchenko
      Pages 168-173
    4. V. A. Laptev, G. V. Khatelishvili
      Pages 181-184
  5. Growth from Melts

    1. Front Matter
      Pages 187-187
    2. Kh. S. Bagdasarov
      Pages 189-203
    3. Kh. S. Bagdasarov, E. R. Dobrovinskaya, V. V. Pishchik, M. M. Chernik, Yu. Yu. Kovalev
      Pages 204-209
    4. F. R. Charvat
      Pages 210-224
    5. E. V. Zharikov, Yu. S. Kuz’minov, V. V. Osiko, T. M. Sarzhevskaya
      Pages 225-230
    6. E. V. Zharikov, V. F. Kalabukhova, Yu. S. Kuz’minov, V. V. Osiko
      Pages 231-236
    7. A. M. Korovkin, Yu. M. Lagunenko, A. M. Morozov, P. P. Feofilov
      Pages 242-245
    8. W. Uelhoff, K. J. Gärtner
      Pages 246-251
    9. A. Modrzejewski
      Pages 252-254
    10. N. V. Kazitsyn, V. A. Yurkov
      Pages 261-264
  6. Imperfections and Crystal Growth

    1. Front Matter
      Pages 265-265
    2. E. P. Kostyukova, V. G. Lyuttsau, Yu. M. Fishman
      Pages 278-291
    3. V. I. Goriletskii, A. D. Podlesnaya, L. G. Eidel’man
      Pages 292-295
    4. S. S. Vakhrameev, M. G. Mil’vidskii, V. B. Osvenskii, V. A. Smirnov, Yu. F. Shchelkin
      Pages 296-301

About this book


Volumes 11 and 12 contain the papers read at the Fourth All-Union Conference on Crystal Growth in Tsakhkadzor, September 17-22, 1972; this volume contains papers on crystal growth from melts, from low-temperature solutions, hydrothermal solutions, and hot solutions, and also from the gas state, including processes involving reactions. In addition, there are papers on crystal perfection in relation to conditions of formation and the effects of electric and mag­ netic fields on crystallization. These papers reflect researches directed to the development and industrial production of perfect crystals required for advanced techniques in solid-state physics and chemistry, as well as for other purposes such as novel materials. There are many different scientific and technical problems in producing large perfect single crystals, and advances in this area made in the USSR and elsewhere are reflected in the papers in both volumes. On the one hand, any particular defective structure in a crystal originates from some mechanism and growth conditions; in particular, inclusions are trapped on account of the physicochemical parameters of the melt, the surface processes, and the sta­ bility of the growth front under particular crystallization conditions. Further, impurity trap­ ping is decisively influenced by the surface kinetics, growth-front stability, composition and structure of the boundary layer, any complexes present in the liquid, and (of course) the crys­ tallochemical relationships between the impurity and the crystal.


chemistry crystal crystallography diffusion kinetics semiconductor solid-state physics thin films

Editors and affiliations

  • A. A. Chernov
    • 1
  1. 1.Institute of CrystallographyAcademy of Sciences of the USSRMoscowUSSR

Bibliographic information