Atomic Layer Deposition for Semiconductors

  • Choel Seong Hwang

Table of contents

  1. Front Matter
    Pages i-x
  2. Introduction

    1. Front Matter
      Pages 1-1
    2. Cheol Seong Hwang, Cha Young Yoo
      Pages 3-12
  3. Fundamentals

    1. Front Matter
      Pages 13-13
    2. Roy G. Gordon
      Pages 15-46
    3. Simon D. Elliott
      Pages 47-69
  4. ALD for Memory Devices

    1. Front Matter
      Pages 71-71
    2. Cheol Seong Hwang, Seong Keun Kim, Sang Woon Lee
      Pages 73-122
    3. Simone Raoux, Mikko Ritala
      Pages 123-148
    4. Susanne Hoffmann-Eifert, Takayuki Watanabe
      Pages 149-171
  5. ALD for Logic Devices

    1. Front Matter
      Pages 173-173
    2. Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, Cheol Seong Hwang
      Pages 175-208
    3. Hyungjun Kim, Soo-Hyun Kim, H. -B. -R. Lee
      Pages 209-238
  6. ALD Machines

    1. Front Matter
      Pages 239-239
    2. Schbuert Chu
      Pages 241-255
  7. Back Matter
    Pages 257-263

About this book


Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.


ALD for mass-production memories ALD modeling ALD simulations Atomic Layer Deposition Modern Semiconductor Devices

Editors and affiliations

  • Choel Seong Hwang
    • 1
  1. 1.Department of Materials Science and EngiSeoul National UniversitySeoulKorea, Republic of (South Korea)

Bibliographic information

Industry Sectors
Chemical Manufacturing