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Evaluation of Advanced Semiconductor Materials by Electron Microscopy

  • David Cherns

Part of the NATO ASI Series book series (NSSB, volume 203)

Table of contents

  1. Front Matter
    Pages i-xi
  2. High Resolution Electron Microscopy

    1. Rob W. Glaisher, J. C. Barry, David J. Smith
      Pages 1-17
    2. G. Feuillet
      Pages 33-45
    3. C. D’Anterroches, J. M. Gerard, J. Y. Marzin
      Pages 47-58
  3. Convergent Beam Electron Diffraction

  4. X-ray and Electron Energy Loss Microanalysis

    1. J. M. Titchmarsh, I. A. Vatter
      Pages 111-126
  5. Cathodoluminescence and Electron Beam Induced Conductivity

  6. Schottky Barriers

  7. Further Analysis of Interfaces

    1. W. M. Stobbs, F. M. Ross
      Pages 183-202
    2. C. J. Humphreys, D. J. Eaglesham, D. M. Maher, H. L. Fraser, I. Salisbury
      Pages 203-216
  8. Ordering/decomposition/analysis of local strains

  9. Surface Microscopy and Diffraction

    1. J. M. Gibson, J. L. Batstone, M. Y. Lanzerotti
      Pages 295-304
    2. J. A. Venables, P. A. Bennett
      Pages 305-318
    3. Philippe-André Buffat, Jean-Daniel Ganière, Pierre Stadelmann
      Pages 319-334
  10. Defects in Heteroepitaxy

    1. P. D. Augustus, P. Kightley, R. R. Bradley, R. J. M. Griffiths
      Pages 335-346
    2. A. Rocher, H. Heral, M. N. Charasse, A. Georgakilas, J. Chazelas, J. P. Hirtz et al.
      Pages 347-354
    3. D. D. Perovic, G. C. Weatherly, D. C. Houghton
      Pages 355-367
    4. Horst P. Strunk
      Pages 369-380
    5. R. Hull, J. C. Bean, D. Bahnck, J. M. Bonar, C. Buescher
      Pages 381-394
    6. D. Cockayne, P. Orders, A. Sikorski, B. Usher, J. Zhou
      Pages 395-402
  11. Appendix

  12. Back Matter
    Pages 409-412

About these proceedings

Introduction

The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop­ ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work­ shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

Keywords

crystal electron electron microscope microscopy scattering segregation semiconductor transmission electron microscopy

Editors and affiliations

  • David Cherns
    • 1
  1. 1.University of BristolBristolUK

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4613-0527-9
  • Copyright Information Springer-Verlag US 1989
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4612-7850-4
  • Online ISBN 978-1-4613-0527-9
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site
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