Hot Carriers in Semiconductors

  • Karl Hess
  • Jean-Pierre Leburton
  • Umberto Ravaioli

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Hot Carrier Luminescence and Femtosecond Spectroscopy

    1. Front Matter
      Pages 1-1
    2. M. Koch, G. von Plessen, T. Meier, J. Feldmann, S. W. Koch, P. Thomas et al.
      Pages 3-6
    3. M. Hübner, E. J. Mayer, N. Pelekanos, J. Kuhl, T. Stroucken, A. Knorr et al.
      Pages 7-10
    4. O. Y. Raisky, W. B. Wang, R. R. Alfano, C. L. Reynolds Jr., V. Swaminathan
      Pages 11-13
    5. A. Lohner, D. Snoke, W. W. Rühle, K. Kühler
      Pages 15-18
    6. P. E. Selbmann, M. Gulia, F. Rossie, E. Molinari, P. Lugli
      Pages 19-22
    7. D. N. Mirlin, B. P. Zakharchenya, P. S. Kop’ev, I. I. Reshina, A. V. Rodina, V. F. Sapega et al.
      Pages 27-30
    8. B. N. Murdin, W. Heiss, C. R. Pidgeon, E. Gornik, S-C. Lee, I. Galbraith et al.
      Pages 31-36
    9. C. Y. Sung, A. Afzali-Kushaa, T. B. Norris, X. Zhang, G. I. Haddad
      Pages 37-41
    10. R. J. Stone, J. G. Michels, S. L. Wong, C. T. Foxon, R. J. Nicholas, A. M. Fox
      Pages 43-47
    11. F. Yang, G. R. Hayes, R. T. Phillips, K. P. O’Donnell
      Pages 49-51
    12. R. Hellmann, A. Euteneur, S. G. Hense, J. Feldmann, P. Thomas, E. O. Göbel et al.
      Pages 53-55
    13. Yu. L. Ivanov, G. V. Churakov, V. M. Ustinov, A. E. Zhukov
      Pages 57-59
    14. Wolfgang Fischler, Günther Zandler, Ralph A. Höpfel
      Pages 61-64
    15. Z. Xu, G. W. Wicks, C. W. Rella, H. A. Schwettman, P. M. Fauchet
      Pages 65-68
    16. V. V. Mitin, G. Paulavičius, N. A. Bannov
      Pages 69-71
    17. D. K. Ferry, E. D. Grann, K. T. Tsen
      Pages 81-84
    18. M. Asche, P. Kleinert, R. Hey, H. Kostial, B. Danilchenko, A. Klimashov et al.
      Pages 85-88
    19. A. Leitenstorfer, C. Fürst, G. Tränkle, G. Weimann, A. Laubereau
      Pages 93-96
    20. A. I. Lobad, Y. Kostoulas, G. W. Wicks, P. M. Fauchet
      Pages 97-99
    21. F. Vallée, P. Langot, R. Tommasi
      Pages 105-108
    22. R. Stasch, M. Asche, M. Giehler, R. Hey, O. G. Sarbey
      Pages 125-127
    23. G. R. Hayes, I. D. W. Samuel, R. T. Phillips
      Pages 129-131
  3. Bloch Oscillations and Fast Coherent Process in Semiconductors

    1. Front Matter
      Pages 133-133
    2. K. Unterrainer, B. J. Keay, M. C. Wanke, S. J. Allen, D. Leonard, G. Medeiros-Ribeiro et al.
      Pages 135-138
    3. B. J. Keay, S. J. Allen Jr., J. Galán, K. L. Campman, A. C. Gossard, U. Bhattacharya et al.
      Pages 139-142
    4. A. Di Carlo, C. Hamaguchi, M. Yamaguchi, H. Nagasawa, M. Morifuji, P. Vogl et al.
      Pages 143-146
    5. F. Rossi, T. Meier, P. Thomas, S. W. Koch, P. E. Selbmann, E. Molinari
      Pages 157-160
    6. M. C. Wanke, A. G. Markelz, K. Unterrainer, S. J. Allen, R. Bhatt
      Pages 161-163
    7. Gary D. Sanders, Alex V. Kuznetsov, Christopher J. Stanton
      Pages 165-167
    8. E. Schöll, G. Schwarz, M. Patra, E. Prengel, A. Wacker
      Pages 177-181
    9. X. L. Lei, N. J. M. Horing, H. L. Cui, K. K. Thornber
      Pages 191-194
    10. T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, S. W. Koch
      Pages 195-197
    11. T. Kuhn, F. Rossi, A. Leitenstorfer, A. Lohner, T. Elsaesser, W. Klein et al.
      Pages 199-204

About this book


This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen­ tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.


Exciton MOSFET Semiconductor electron transport electrons laser diode online semiconductors simulation spectroscopy temperature

Editors and affiliations

  • Karl Hess
    • 1
  • Jean-Pierre Leburton
    • 1
  • Umberto Ravaioli
    • 1
  1. 1.University of Illinois at Urbana — ChampaignUrbanaUSA

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