© 2010

Fundamentals of III-V Semiconductor MOSFETs

  • Serge Oktyabrsky
  • Peide Ye

Table of contents

  1. Front Matter
    Pages i-xv
  2. Tejas Krishnamohan, Donghyun Kim, Krishna C. Saraswat
    Pages 7-27
  3. Yang Liu, Himadri S. Pal, Mark S. Lundstrom, Dae-Hyun Kim, Jesús A. del Alamo, Dimitri A. Antoniadis
    Pages 31-50
  4. Alexander A. Demkov, Xuhui Luo, Onise Sharia
    Pages 51-92
  5. Evgueni A. Chagarov, Andrew C. Kummel
    Pages 93-130
  6. Marko Milojevic, Christopher L. Hinkle, Eric M. Vogel, Robert M. Wallace
    Pages 131-172
  7. Serge Oktyabrsky, Yoshio Nishi, Sergei Koveshnikov, Wei-E Wang, Niti Goel, Wilman Tsai
    Pages 195-250
  8. K. Y. (Norman) Cheng, Milton Feng, Donald Cheng, Chichih Liao
    Pages 285-306
  9. Serge Oktyabrsky
    Pages 349-378
  10. M. Shur, G. Simin, S. Rumyantsev, R. Jain, R. Gaska
    Pages 379-422
  11. Jaydeep P. Kulkarni, Kaushik Roy
    Pages 423-442
  12. Back Matter
    Pages 443-445

About this book


Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth.

Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies.

Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.



CMOS Leistungsfeldeffekttransistor compound semiconductors dielectrics digital circuits field-effect transistor heterostructure FETs high-k gate oxides interface chemistry material metal oxide semiconductur field-effect transistor physics semi

Editors and affiliations

  • Serge Oktyabrsky
    • 1
  • Peide Ye
    • 2
  1. 1.College of Nanoscale Science &University at Albany - SUNYAlbanyU.S.A.
  2. 2.Birck Nanotechnology CenterPurdue UniversityWest LafayetteU.S.A.

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