© 2008

Microscopy of Semiconducting Materials 2007

  • A. G. Cullis
  • P. A. Midgley
  • Gives a complete overview of nanostructures of all types, from quantum dots, wires to nanotubes

  • Complete study of the effects of semiconductor processing treatment such as oxidatorion, nitridation, ion implantation, and annealing

  • Provides an up-to-date overview of lattice defects and impurity behaviour in semiconducting materials

Conference proceedings

Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Wide Band-Gap Nitrides

    1. C J Humphreys, M J Galtrey, N van der Laak, R A Oliver, M J Kappers, J S Barnard et al.
      Pages 3-12
    2. A Andreev, E Sarigiannidou, E Monroy, B Daudin, J Rouvière
      Pages 13-16
    3. A Pretorius, K Müller, T Yamaguchi, R Kröger, D Hommel, A Rosenauer
      Pages 17-20
    4. Q Wang, T Wang, P J Parbrook, J Bai, A G Cullis
      Pages 21-24
    5. P D Cherns, C McAleese, M J Kappers, C J Humphreys
      Pages 25-28
    6. T C Sadler, M J Kappers, M E Vickers, R A Oliver
      Pages 29-32
    7. J Bai, T Wang, P J Parbrook, K B Lee, Q Wang, A G Cullis
      Pages 33-36
    8. Z Liliental-Weber, O Kryliouk, H J Park, J Mangum, T Anderson, W Schaff
      Pages 37-40
    9. A Delimitis, Ph Komninou, J Arvanitidis, M Katsikini, S-L Sahonta, E Dimakis et al.
      Pages 41-44
    10. A Mogilatenko, W Neumann, E Richter, M Weyers, B Velickov, R Uecker
      Pages 45-48
    11. B Pécz, L Tóth, L Dobos, P Bove, H Lahrèche, R Langer
      Pages 53-56
    12. L Tóth, L Dobos, B Pécz, M A di Forte Poisson, R Langer
      Pages 57-60
    13. Y Zhang, C McAleese, H Xiu, C J Humphreys, R R Lieten, S Degroote et al.
      Pages 61-64
    14. G P Dimitrakopulos, Ph Komninou, Th Kehagias, A Delimitis, J Kioseoglou, S-L Sahonta et al.
      Pages 66-68
    15. N Ketteniss, M J Kappers, C McAleese, R A Oliver
      Pages 69-72
    16. T Li, C Simbrunner, A Navarro-Quezada, M Wegscheider, M Quast, A Bonanni
      Pages 77-80
    17. W N Ng, K N Hui, X H Wang, C H Leung, P T Lai, H W Choi
      Pages 81-84

About these proceedings


The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.


Canopus Semiconductor Transmission electron microscopy crystals and superlattices electron microscopy integrated circuit microcharacterization techniques nanoscience and nanostructures quantum dot semiconductor materials semiconductor processing treatments thin film

Editors and affiliations

  • A. G. Cullis
    • 1
  • P. A. Midgley
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK
  2. 2.Department of Materials Science and MetallurgyUniversity of CambridgeCambridgeUK

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