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Microscopy of Semiconducting Materials

Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK

  • A. G. Cullis
  • J. L. Hutchison
Conference proceedings

Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Table of contents

  1. High Resolution Microscopy and Nanoanalysis

    1. A C Twitchett, T J V Yates, P K Somodi, S B Newcomb, R E Dunin-Borkowski, P A Midgley
      Pages 229-232
    2. M Schowalter, A Rosenauer, D Lamoen, P Kruse, D Gerthsen
      Pages 233-236
  2. Self-Organised and Quantum Domain Structures

    1. Front Matter
      Pages 237-237
    2. K Furuya, K Mitsuishi, M Shimojo, M Song, M Tanaka, M Takeguchi
      Pages 239-242
    3. D Zhi, M J Hÿtch, R E Dunin-Borkowski, P A Midgley, D W Pashley, B A Joyce et al.
      Pages 243-246
    4. D Chithrani, D D Perovic, R L Williams, J Lefebvre, P J Poole, G C Aers
      Pages 247-250
    5. M Gutiérrez, M Hopkinson, M Herrera, D González, R García
      Pages 251-254
    6. M Gutiérrez, M Hopkinson, A I Tartakovskii, M S Skolnick, M Herrera, D González et al.
      Pages 255-258
    7. A M Sánchez, M H Gass, A J Papworth, R Beanland, V Drouot, P J Goodhew
      Pages 259-262
    8. J C C Lin, I M Ross, P W Fry, A I Tartakoskii, R S Kolodka, R Hogg et al.
      Pages 267-270
    9. T Ben, A M Sánchez, S I Molina, D Granados, J M García, S Kret
      Pages 271-274
    10. D Litvinov, D Gerthsen, A Rosenauer, T Passow, M Grün, C Klingshirn et al.
      Pages 275-278
    11. M Herrera, D González, J G Lozano, M Hopkinson, M Gutierrez, P Navaretti et al.
      Pages 279-282
    12. Andrew S W Wong, Ghim W Ho, Pedro M F J Costa, Rachel A Oliver, Colin J Humphreys
      Pages 287-290
    13. F Hernández, O Casals, A Vilà, J R Morante, A Romano-Rodriguez, M Abid et al.
      Pages 291-294
    14. M A Verheijen, E P A M Bakkers, A R Balkenende, A L Roest, M M H Wagemans, M Kaiser et al.
      Pages 295-298
    15. E Müller, P Kruse, D Gerthsen, A Rosenauer, M Schowalter, D Lamoen et al.
      Pages 303-306
    16. V Stolojan, P Moreau, M J Goringe, S Ravi P Silva
      Pages 307-310
    17. N Y Jin-Phillipp, Ch Deneke, J Thomas, M Kelsch, R Songmuang, M Stoffel et al.
      Pages 311-314
    18. C R Perrey, J Deneen, C B Carter
      Pages 315-318
    19. J Biskupek, U Kaiser, H Lichte, A Lenk, G Pasold, W Witthuhn
      Pages 319-322
    20. J Deneen, C R Perrey, Y Ding, A Bapat, S A Campbell, U Kortshagen et al.
      Pages 323-326
    21. L M Sorokin, V I Sokolov, A E Kalmykov, L V Grigoryev
      Pages 327-332
    22. E Rossinyol, J Arbiol, F Peiró, A Cornet, J R Morante, L A Solovyov et al.
      Pages 333-336
  3. Processed Silicon and Other Device Materials

    1. Front Matter
      Pages 337-337
    2. E Bugiel, H J Osten, A Fissel, O Kirfel, M Czernohorsky
      Pages 343-346
    3. T C Cheng, H T Hsueh, W J Huang, M N Chang, J S Wu, S C Kung
      Pages 351-354
    4. D J Stowe, K J Fraser, S A Galloway, S Senkader, R J Falster, P R Wilshaw
      Pages 355-358
    5. L I Fedina, S A Song, A L Chuvilin, A K Gutakovskii, A V Latyshev
      Pages 359-362
    6. A Renard, B Domengès
      Pages 367-370
    7. M Wzorek, J Kątcki, J Ratajczak, B Jaroszewicz, K Domański, P Grabiec
      Pages 375-378
    8. A Lauwers, J A Kittl, M J H van Dal, O Chamirian, M A Pawlak, C Torregiani et al.
      Pages 379-388
    9. B Van Daele, G Van Tendeloo, W Ruythooren, J Derluyn, M R Leys, M Germain
      Pages 389-392
    10. K Torigoe, Y Ohno, T Ichihashi, S Takeda
      Pages 393-396
    11. H Bender, O Richard, P Van Marcke, C Drijbooms
      Pages 397-400
  4. Device Studies

    1. Front Matter
      Pages 401-401
    2. T Kamino, T Yaguchi, M Konno, T Hashimoto, T Ohnishi, K Umemura
      Pages 409-412
    3. A C K Chang, I M Ross, D J Norris, A G Cullis, Y T Tang, C Cerrina et al.
      Pages 413-416
    4. W C Hung, T Wang, Hung-Cheng Lin, Guan-Ting Chen, Jen-Inn Chyi, A G Cullis
      Pages 423-426
    5. Wen-Chang Hung, A M Adawi, R Dean, A Cadby, L G Connolly, A Tahraoui et al.
      Pages 427-431
    6. H Kirmse, W Neumann, U Zeimer, R Pazirandeh, W Oesterle
      Pages 433-436

About these proceedings

Introduction

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Keywords

electron microscope electron microscopy integrated circuit nanostructures plasma processing scanning probe microscopy semiconductor materials transmission electron microscopy

Editors and affiliations

  • A. G. Cullis
    • 1
  • J. L. Hutchison
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK
  2. 2.Department of MaterialsUniversity of OxfordOxfordUK

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