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  • Conference proceedings
  • © 2005

Microscopy of Semiconducting Materials

Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK

Part of the book series: Springer Proceedings in Physics (SPPHY, volume 107)

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Table of contents (113 papers)

  1. Epitaxy: Silicon-Germanium Alloys

    1. TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB

      • M Cabié, G Benassayag, A Rocher, A Ponchet, J M Hartmann, F Fournel
      Pages 93-96
    2. Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources

      • Norbert Hueging, Martina Luysberg, Knut Urban, Dan Buca, Bernd Hollaender, Siegfried Mantl et al.
      Pages 97-102
    3. TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers

      • N Zakharov, P Werner, G Gerth, L Schubert, L Sokolov, U Gösele
      Pages 103-106
    4. Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy

      • G A Maximov, D E Nikolitchev, D O Filatov
      Pages 107-110
    5. A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM

      • A C K Chang, D J Norris, I M Ross, A G Cullis, S H Olsen, A G O’Neill
      Pages 111-114
  2. Epitaxy: Growth and Defect Phenomena

    1. Front Matter

      Pages 115-115
    2. Beta to alpha transition and defects on SiC on Si grown by CVD

      • F M Morales, Ch Förster, O Ambacher, J Pezoldt
      Pages 131-134
    3. Strain relaxation and void reduction in SiC on Si by Ge predeposition

      • F M Morales, P Weih, Ch Wang, Th Stauden, O Ambacher, J Pezoldt
      Pages 135-138
    4. Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops

      • M Herrera, D González, J G Lozano, M Hopkinson, M Gutierrez, P Navaretti et al.
      Pages 139-142
    5. Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy

      • M W Fay, Y Han, S V Novikov, K W Edmonds, K Wang, B L Gallagher et al.
      Pages 143-146
    6. Structural characterisation of MBE grown zinc-blende Ga1−xMnxN/GaAs(001) as a function of Ga flux

      • Y Han, M W Fay, P D Brown, S V Novikov, K W Edmonds, B L Gallagher et al.
      Pages 155-158
    7. Magic matching in semiconductor heterojunctions

      • B Pécz, Á Barna, V Heera, W Skorupa
      Pages 159-162
    8. Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure

      • R Beanland, A M Sánchez, A J Papworth, M H Gass, P J Goodhew
      Pages 163-166
    9. A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire

      • M Abouzaid, P Ruterana, G Nouet, C Liu, F Yun, B Xiao et al.
      Pages 171-174
  3. High Resolution Microscopy and Nanoanalysis

    1. Front Matter

      Pages 175-175

About this book

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Editors and Affiliations

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK

    A. G. Cullis

  • Department of Materials, University of Oxford, Oxford, UK

    J. L. Hutchison

Bibliographic Information

Buy it now

Buying options

eBook USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access