Journal of the Korean Physical Society

, Volume 73, Issue 2, pp 190–202 | Cite as

Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems

  • Jong Su KimEmail author
  • Im Sik Han
  • Sang Jun Lee
  • Jin Dong Song
Review Articles
Part of the following topical collections:
  1. JKPS 50th Anniversary Reviews


During the Ga-molecules suppling on to the lattice-matched AlGaAs surface, we discussed the Ga-droplet formation dynamics based on Ga migration and diffusion behavior on GaAs (100), (111)A and (111)B surfaces. We discussed the formation mechanism of GaAs quantum dots (QDs), quantum dot molecules (QDMs; coupled QDs), single quantum rings (QRs), and double quantum rings (d-QRs; coupled QRs) complexes. Since the shape of GaAs quantum nanostructures (QNs) on (100) surface is affected by the out-migration of Ga-molecules due to the specific surface As coverage condition during crystallization, we can also control the shape of QNs by varying the conditions of droplet epitaxy process. In addition, by using the nature of the Ga-migration on the (111)A and (111)B surfaces, we fabricated ultra-high density (1.6 × 1011 /cm2) GaAs QDs and ultra-low density (6.5 × 105 /cm2) GaAs QNs on the AlGaAs (111)A and (111)B surfaces surface, respectively.


GaAs Droplet epitaxy Quantum nanostructures 


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Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  • Jong Su Kim
    • 1
    Email author
  • Im Sik Han
    • 2
  • Sang Jun Lee
    • 3
  • Jin Dong Song
    • 4
  1. 1.Department of PhysicsYeungnam UniversityGyeongsanKorea
  2. 2.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK
  3. 3.Division of Convergence TechnologyKorea Research Institute of Standards and ScienceDaejeonKorea
  4. 4.Post-Silicon Semiconductor InstituteKorea Institute of Science and TechnologySeoulKorea

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