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Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

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Abstract

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of 2.41 × 1016 and the other with a density of 3.91×1016 cm −3. However, after maximum electrical stress, three sets of deep-level states, with respective densities of 1.82×1016, 2.32×1016 cm −3, 5.31×1016 cm −3 were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

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Authors and Affiliations

  1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 54896, Korea

    Seonghoon Jeong & Hyunsoo Kim

  2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Korea

    Sung-Nam Lee

Authors
  1. Seonghoon Jeong
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  2. Hyunsoo Kim
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  3. Sung-Nam Lee
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Correspondence to Hyunsoo Kim.

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Jeong, S., Kim, H. & Lee, SN. Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress. J. Korean Phys. Soc. 73, 1879–1883 (2018). https://doi.org/10.3938/jkps.73.1879

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  • DOI: https://doi.org/10.3938/jkps.73.1879

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