Abstract
To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O2 thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the (Hf, Zr)O2 thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.
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References
L. W. Martin and A. M. Rappe, Nature Reviews Materials 2, 16087 (2016).
N. Settera et al., J. Appl. Phys. 100, 051606 (2006).
Z. Fan, J. Chen and J. Wang, JOURNAL OF ADVANCED DIELECTRICS 6, 1630003 (2016).
J. Müller et al., Nano letters 12, 4318 (2012).
F. Ambriz-Vargas, R. Thomas and A. Ruediger, Frontiers in Materials Processing, Applications (Springer Nature Singapore Pte Ltd., 2018).
K. D. Kim et al., Journal of Materials Chemistry C 4, 6864 (2016).
T. Nishimura et al., Japanese Journal of Applied Physics 55, 08PB01 (2016).
T. Kiguchi et al., Journal of the Ceramic Society of Japan 124, 689 (2016).
T. Shimizu1 et al., Japanese Journal of Applied Physics 53, 09PA04 (2014).
V. Dave, P. Dubey and H.O. Gupta, Thin Solid Films 549, 2 (2013).
S. Clima et al., Appl. Phys. Lett. 104, 092906 (2014).
J. Müller et al., ESC Trans. 64, 159 (2014).
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Moon, S.E., Kim, J.H., Im, J.P. et al. Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method. J. Korean Phys. Soc. 73, 1712–1715 (2018). https://doi.org/10.3938/jkps.73.1712
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DOI: https://doi.org/10.3938/jkps.73.1712