Abstract
Boron-doped p-type Ge layers were grown on n-type Si (100) wafers at various boron doping concentrations by using Rapid Thermal Chemical Vapor Deposition. The root-mean-square was surface roughness of p-type Ge layer increase from 0.708 nm to 19.980 nm as the doping concentrations increase from 3 × 1016 cm−3 to 4 × 1022 cm−3. From High Resolution X-ray diffraction, the in-plane lattice constants and tensile strains of the p-type Ge layer were evaluated as function of boron doping concentration the Raman shift of the for each location indicate a tensile strain from the p-type Ge layer. The tensile strain of the p-type Ge layer decreases from 0.071% to 0.032% as the boron doping concentrations increases from 3 × 1016 cm−3 to 4 × 1022 cm−3. Moreover, the photocurrent peak energies increased. The temperature dependence of the direct band-gap energy, E, of the p-type Ge layer could be described by using Varshnis empirical expression: EΓ(T) = 0.86 − 5.82 × 10−4 T2/(T + 296).
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Kil, YH., Yang, H.D., Yang, JH. et al. Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD. Journal of the Korean Physical Society 64, 443–450 (2014). https://doi.org/10.3938/jkps.64.443
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DOI: https://doi.org/10.3938/jkps.64.443