Abstract
In this study, 600-V/20-A 4H-SiC Schottky barrier diodes (SBDs) were fabricated to investigate the effect of key processing steps, especially before and after the formation of a Schottky contact, on the electrical performances of SBDs and on their long-term reliabilities. The results show that 4H-SiC SBDs that had been subjected to a hydrogen-ambient annealing at 470 °C for 10 min and sacrificial treatment right after ion activation exhibited a lower forward voltage drop (V F ) at a rated current of 20 A, a higher blocking voltage of 800 V, and a very short reverse recovery time of 17.5 ns. Despite the harsh reverse bias condition and temperature, a long-term reliability test showed that changes in the forward voltage drop and the reverse leakage current (I R ) were 0.7% and 8.9% and that the blocking voltage was enhanced. This is attributed to the presence of a stabilized interface between the passivation layer and the SiC due to aging.
Similar content being viewed by others
Refrerences
J. C. Zolper and M. Skowronski, MRS Bull. 30, 273 (2005).
S. J. Joo, I. H. Kang, W. Bahng, S. C. Kim and N. K. Kim, J. Korean Phys. Soc. 54, 1802 (2009).
S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, 1981), p. 262.
R. Kohishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama and M. Murakami, Mater. Sci. Eng. B 98, 286 (2003).
P. B. Ghate, J. C. Blair, C. R. Fuller and G. E. McGuire, Thin Solid Films 53, 117 (1978).
D. H. Kim, J. H. Lee, J. H. Moon, M. S. Oh, H. K. Song, J. H. Yim, J. B. Lee and H. J. Kim, Solid State Phenomena 124–126, 105 (2007).
F. Dahlquist, Junction barrier Schottky rectifiers in silicon carbide, Ph. D dissertation, Kungl Tekniska Högskolan, 2002.
I. H. Kang, S. C. Kim, S. J. Joo, W. Bahng and N. K. Kim, J. Korean Phys. Soc. 55, 1036 (2009).
H. Fujiwara, H. Naruoka, M. Konishi, K. Hamada, T. Katsuno, T. Ishikawa, Y. Watanabe and T. Endo, Appl. Phys. Lett. 100, 242102 (2012).
V. K. Khanna, IGBT Theory and Design (IEEE Press, Piscataway, 2003).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kang, IH., Kim, SC., Moon, JH. et al. Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode. Journal of the Korean Physical Society 64, 1886–1891 (2014). https://doi.org/10.3938/jkps.64.1886
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.64.1886