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Photocurrent spectroscopy of InAs/GaAs quantum dots grown by using MBE

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Abstract

The electrical properties of InAs/GaAs quantum dots grown by using molecular beam epitaxy (MBE) were studied by using photocurrent (PC) spectroscopy. From the photocurrent spectrum at 20 K, the signals around 1.24 and 1.49 eV were related to the quantum dots and the GaAs layer, respectively. The bias voltage dependence of the PC spectra showed that the Schottky barrier height of Au/GaAs was 0.8 V. In the temperature dependence of I–V curves, the photocurrent intensity changed differently for different incident photon energies (1.3 and 1.6 eV) because of a decrease in the excitons binding energy in the quantum dots.

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Authors and Affiliations

  1. Department of Physics, Yeungnam University, Gyeongsan, 712-749, Korea

    Hyun-Jun Jo & In-Ho Bae

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  1. Hyun-Jun Jo
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  2. In-Ho Bae
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Correspondence to In-Ho Bae.

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Jo, HJ., Bae, IH. Photocurrent spectroscopy of InAs/GaAs quantum dots grown by using MBE. Journal of the Korean Physical Society 60, 787–790 (2012). https://doi.org/10.3938/jkps.60.787

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  • DOI: https://doi.org/10.3938/jkps.60.787

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