Abstact
We investigated the diffusion barrier properties of an atomic-layer-deposited 12-nm-thick iridium (Ir) thin film as functions of the thermal treatment temperature. Up to a temperature of 500 °C, the Ir thin film maintained its initial configuration, preventing the penetration of the Cu layer into Si through the Ir layer. The thermal stability of the Ir layer up to 500 °C was confirmed by using high resolution transmission electron microscopy, Auger electron microscopy, and X-ray diffraction. In contrast, when the Ir layer was thermally annealed at 600 °C, copper silicide was formed, and interdiffusion of Cu and Ir was observed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
International Technology Roadmap for Semiconductors: 2008 update, (http://www.itrs.net/).
Z. H. Cao, K. Hu and X. K. Meng, J. Appl. Phys. 106, 113513 (2009).
Z. Wang, O. Yaegashi, H. Sakaue, T. Takahagi and S. Shingubara, J. Appl. Phys. 94, 4697 (2003).
Y. Kang, C. Lee and J. Lee, Mater. Sci. Eng., B 75, 17 (2000).
S. Y. Kang, C. S. Hwang and H. J. Kim, J. Electrochem. Soc. 152, C15 (2005).
C. Henkel, S. Abermann, O. Bethge and E. Bertagnolli, Semicond. Sci. Technol. 24, 125013 (2009).
M. A. Alam and M. L. Green, J. Appl. Phys. 94, 3403 (2003).
S. H. Kim, H. T. Kim, S. S. Yim, D. J. Lee, K. S. Kim, H. M. Kim, K. B. Kim and H. Sohn, J. Electrochem. Soc. 155, H589 (2008).
S. Kumar, D. Greenslit, T. Chakraborty and E. T. Eisenbraun, J. Vac. Sci. Technol., A 27, 572 (2009).
Q. Xie, Y. L. Jiang, J. Musschoot, D. Deduytsche, C. Detavernier, R. L. Van Meirhaeghe, S. Van den Berghe, G. P. Ru, B. Z. Li and X. P. Qu, Thin Solid Films 517, 4689 (2009).
O. K. Kwon, S. H. Kwon, H. S. Park and S. W. Kang, Electrochem. Solid-State Lett. 7, C46 (2004).
B. H. Choi, Y. H. Lim, J. H. Lee, Y. B. Kim, H. N. Lee and H. K. Lee, Microelectron. Eng. 87, 1391 (2010).
T. Aaltonen, M. Ritala, V. Sammelselg and M. Leskelä, J. Electrochem. Soc. 151, G489 (2004).
Y. M. Sun, X. M. Yan, N. Mettlach, J. P. Endle, P. D. Kirsch, J. G. Ekerdt, S. Mashukar, R. L. Hance and J. M. White, J. Vac. Sci. Technol., A 18, 10 (2000).
S. W. Kim, S. H. Kwon, D. K. Kwak and S. W. Kang, J. Appl. Phys. 103, 023517 (2008).
Y. Ritterhaus, T. Hur’yeva, M. Lisker and E. P. Burter, Chem. Vap. Deposition 13, 698 (2007).
J. Hämäläinen, M. Kemell, F. Munnik, U. Kreissig, M. Ritala and M. Leskelä, Chem. Mater. 20, 2903 (2008).
D. Josell, J. E. Bonevich, T. P. Moffat, T. Aaltonen, M. Ritala and M. Leskelä, Electrochem. Solid-State Lett. 9, C48 (2006).
Y. H. Lim, H. Yoo, B. H. Choi, J. H. Lee, H. N. Lee and H. K. Lee, Phys. Status Solidi C 8, 891 (2011).
T. Laurila, K. Zeng, J. K. Kivilahti, J. Molarius and I. Suni, J. Appl. Phys. 88, 3377 (2000).
C. W. Chen, J. S. Chen and J. S. Jeng, J. Electrochem. Soc. 155, H1003 (2008).
C. W. Chen, J. S. Chen and J. S. Jeng, J. Electrochem. Soc. 156, H724 (2009).
J. J. Tan, X. P. Qu, Q. Xie, Y. Zhou and G. P. Ru, Thin Solid Films 504, 231 (2006).
C. M. Liu, W. L. Liu, W. J. Chen, S. H. Hsieh, T. K. Tsai and L. C. Yang, J. Electrochem. Soc. 152, G234 (2005).
J. Nazon, M. H. Berger, J. Sarradin, J. C. Tedenac and N. Fréty, Plasma Processes Polym. 6, S844 (2009).
L. Jiang, P. He, G. He, X. Zong and C. Lee, Jpn. J. Appl. Phys. 41, 6525 (2002).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Song, S.I., Choi, B.H., Lee, J.H. et al. Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures. Journal of the Korean Physical Society 60, 1521–1525 (2012). https://doi.org/10.3938/jkps.60.1521
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.60.1521