Electrically Controlled Magnetoresistance in Ion-Gated Platinum Thin Films
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Electric-field-induced correlated states of matter are an important topic in solid-state research. The recent revival of the ionic gating technique allows modulation of the carrier density even on metal surfaces. Here, we show that the anomalous magnetoresistance induced in ion-gated paramagnetic platinum thin films can be analyzed in the framework of an induced ferromagnetic phase on a platinum surface. The temperature dependence of the anomalous Hall component extracted from the observed superlinear Hall resistance was described well by using the Bloch equation for ferromagnetism. Moreover, a negative longitudinal magnetoresistance was observed at small angles between the film’s plane and magnetic field, consistent with the behavior of ferromagnetic metal alloys.
KeywordsAnomalous Hall effect Induced magnetism Ionic gating
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This research was supported by “Enhancement of Measurement and Standards Technologies in Physical SI Units” funded by the Korea Research Institute of Standards and Science (KRISS-2019-GP2019-0001), the Future Materials Discovery Program through the National Research Foundation of Korea (No. 2015M3D1 A1070467) and a National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST) from the Korean government (MSIP).
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